The Moss rule and the influence of doping on the optical dielectric constant of semiconductors—I

Finkenrath, H.

doi:10.1016/0020-0891(88)90054-1

Cited by 42 publications

(20 citation statements)

References 9 publications

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“…This is in full consistency with the findings in studies [1,2,4,5]. In agreement with the Moss rule, however, high index coatings tend to have lower bandgap values than low-index samples [6]. The practical conclusion is that the UV transparency is best for the non-assisted samples and lowest for the coatings deposited with xenon assistance.…”

Section: Resultssupporting

confidence: 78%

Preparation of UV-VIS high index coating materials with PIAD using xenon as a working gas

Wilbrandt

Stenzel

Schlegel

et al. 2013

Optical Interference Coatings

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Section: Resultssupporting

confidence: 78%

Preparation of UV-VIS high index coating materials with PIAD using xenon as a working gas

Wilbrandt

Stenzel

Schlegel

et al. 2013

Optical Interference Coatings

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“…Actually, in many insulators and semiconductors with E g ≃ 1~10 eV, we see commonly α ≲ 10 5 cm -1 [9]. A weak dependence of the linear refractive-index n 0 on E g , the Moss rule n 0 = 3/E g 1/4 , may be obtained from Equation 3 [10]. On the other hand,…”

Section: Fundamentalsmentioning

confidence: 98%

“…Some useful relations, the Moss rule [10], Wemple-DiDomenico relation (W-D) [11], Bolings' relation [6], Sheik-Bahaes' relation [12], and β ∝1/E g 2 are also…”

Section: Fundamentalsmentioning

confidence: 99%

Optical nonlinearity in glasses: the origin and photo-excitation effects

Tanaka

Saitoh

2007

J Mater Sci: Mater Electron

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Linear and nonlinear optical properties in oxide and chalcogenide glasses have been studied comparatively. Applying a semiconductor concept to these glasses, we show that maximal nonlinear refractive-index at optical communication wavelengths is ~10 -4 cm 2 /GW, which can be obtained in materials with bandgap energy of ~1.6 eV. It is also shown for SiO 2 and As 2 S 3 that linear and nonlinear optical excitations induce different photostructural changes, which are attributable to different photo-electronic transition probabilities.

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“…In a theoretical derivation of optical polarizability, Finkenrath [17] described a treatment in the transitions from the valence band to the conduction band. These transitions are represented by differential oscillator densities that occur at distributed resonant frequencies.…”

Section: Moss Relation and Its Implicationsmentioning

confidence: 99%