Energy gap–refractive index relations in semiconductors – An overview

Ravindra, Nuggehalli M.; Ganapathy, Preethi S.; Choi, Jinsoo

doi:10.1016/j.infrared.2006.04.001

Cited by 438 publications

(192 citation statements)

References 26 publications

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“…Moss proposed relationships between fundamental optical properties such as the refractive index and electronic properties such as the energy gap in semiconductors. 13 These relationships have been extremely helpful to interpret the opto-electronic properties of semiconductors.…”

Section: 5mentioning

confidence: 99%

Editorial

Ravindra¹

2013

Emerging Materials Research

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Section: 5mentioning

confidence: 99%

Editorial

Ravindra¹

2013

Emerging Materials Research

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“…Examples include application-specific integrated circuits (ASICs), 13 application-specific coating technologies (ASpeCT) 14, 15 , nano/micro electronic/opto mechanical structures (NEMS/MEMS/ MOMS) 16 and optoelectronic integrated circuits (OEICs) 17,18 . The International Technology Roadmap for Semiconductors (ITRS 2.0, see http://www.itrs2.net/itrs-reports.html) calls for '3D Power Scaling' as the next phase of silicon integrated circuit technology.…”

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confidence: 99%

Editorial

Ravindra¹

2016

Emerging Materials Research

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“…It has been understood that the films prepared without stirring are found to have a closer reported refractive index (3) [21]. As the refractive index is a measure of transparency to incident spectral radiation, the lower refractive index of films prepared without stirring corresponds to comparatively lower transparency and in turn higher absorption than in the case of the films prepared with stirring [22].…”

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confidence: 99%