The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates

Fabrication of nanoscale single crystal InP membranes

“…While the etch systems used have very high etch selectivity, they also have significant etch anisotropy, resulting in substantial undercutting along ͑111͒ planes. The membrane pattern is transferred to the SiO 2 layer and is etched by a selective wet chemical process, using the conventional solution 14 of H 3 PO 4 : HCl 3:1 ͓Fig. The etch holes to release the support structure are created by etching through the SiO 2 mask down to the In 0.53 Ga 0.47 As sacrificial layer with methane-hydrogen-argon in an electron cyclotron resonance reactive ion etching ͑ECR-RIE͒ system ͓Figs.…”