SEM and AFM characterisation of high-mesa patterned InP substrates prepared by wet etching

Eliáš, P.; Cambel, V.; Hasenöhrl, S.; Hudek, P.; Novák, J.

doi:10.1016/s0921-5107(99)00113-0

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…Such facets are interesting because they are naturally heavily striated. Similar striated facets, namely (211)Arelated or (111)A-related, are also formed in other HCl-based and HBr-based solutions, respectively [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 96%

Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl

Eliáš

Šoltýs

Kostič

2004

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 96%

Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl

Eliáš

Šoltýs

Kostič

2004

Superlattices and Microstructures

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“…The mask designers need to know how the etching proceeds as the function of specific mask topology and its geometrical aspects. In this respect, the etching behaviour has mostly been documented for [011]-and [0 11]-oriented linear patterns on (100) wafers [18][19][20][21][22][23]. A few articles have dealt with differently oriented patterns or wafers [17,[24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Wet-etch bulk micromachining of (100) InP substrates

Eliáš

Kostič

Šoltýs

et al. 2004

J. Micromech. Microeng.

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The study focused on object formation in (100) InP by etching in 3HCl:1H3PO4 through convex and concave square mask patterns of varied orientation and size. Their upper right-hand-side corners were aligned to , and to 15°, 30° and 45° off to . Some -oriented convex squares had - and -oriented corners compensated with rectangular extensions. The concave patterns led to objects with ordinary slow-etching or etch-stop facets along sides in line within and with ordinary and re-entrant facets along sides in line within . The convex patterns (, 15° and 30°) led to objects initially confined by fast-etching facets at corners and slow-etching or etch-stop facets at sides (ordinary between and , and re-entrant between and ). The side facets were eliminated by the progress of the corner ones. They (-oriented patterns) proceeded at rates almost independent of size before the eradication of the side facets, after which they proceeded faster. The -oriented convex patterns led to objects confined only by fast-etching facets. The objects developed at rates that considerably depended on pattern size and etching time. Objects under small patterns developed faster compared to those under large ones. The -oriented corner-compensated patterns led to pyramidal objects confined by facets related to (110), , (101) and .

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Wet Etching Study of La0.67(Sr0.5Ca0.5)0.33MnO3 Films on Silicon Substrates

Kim

Grishin

Ignatova

2007

Journal of Elec Materi

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Wet etching of colossal magnetoresistive (CMR) perovskite La 0.67 (Sr 0.5 Ca 0.5 ) 0.33 MnO 3 (LSCMO) films on Bi 4 Ti 3 O 12 /CeO 2 /yttrium-stabilized zirconia (YSZ)-buffered Si substrates was investigated using potassium hydroxide (KOH) and buffered hydrofluoric acid (BHF) solutions. X-ray diffraction (XRD) and scanning spreading resistance microscopy (SSRM) measurements revealed that the morphological roughness of the LSCMO films increases, while the electrical resistance roughness decreases, with increasing KOH etching time. The LSCMO films are highly chemically resistant to KOH solution; however, in the case of BHF etching, an etch rate of 22 nm/min was obtained with high selectivity over a photoresist mask.

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SEM and AFM characterisation of high-mesa patterned InP substrates prepared by wet etching

Cited by 5 publications

References 12 publications

Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl

Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl

Wet-etch bulk micromachining of (100) InP substrates

Wet Etching Study of La0.67(Sr0.5Ca0.5)0.33MnO3 Films on Silicon Substrates

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