The mechanism study of mixed Ar/O2 plasma-cleaning treatment on niobium surface for work function improvement

Zhang, Zhiyan; Ye, Zongbiao; Wang, Zhijun; Gou, Fujun; Shen, Bizhou; Wu, Aoli; He, Yuan; He, Pengjie; Wang, Hongbin; Chen, Bo; Chen, Jianjun; Zhang, Kun; Wei, Jingxuan

doi:10.1016/j.apsusc.2018.12.156

Cited by 20 publications

(14 citation statements)

References 26 publications

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“…The details of the RBS measurement were explained in section 2.2 and the RUMP code was used to obtain the depth distributions of niobium and nitrogen of the N-doped sample. As seen in figure 6(a), the backscattered yield of the N-doped sample was lower than that of the initial niobium, indicating that some lighter (in mass) elements may exist on the N-doped sample surface [26]. Taking into consideration the above-mentioned analysis result, nitrogen must be contained among the lighter elements since β-Nb 2 N exists on the N-doped sample surface but is absent on the initial sample surface.…”

Section: Depth Analysis Of Nitrogen Diffusionmentioning

confidence: 92%

“…The scan range was from 30 to 130°with a scan step size of 0.04°. The GIXRD pattern of the initial sample is shown in figure 4(a), where the diffraction reflexes all belong to metallic Nb (PDF#34-0370), including crystal planes of Nb(110), Nb(200), Nb(211), Nb(220), Nb(310), Nb(222) and Nb(321) [25,26]. In figure 4(b), the GIXRD pattern of the N-doped sample is displayed, from which the diffraction reflexes for Nb were still seen but with smaller FWHM (full width at half maximum), which was attributed to the thermal-induced crystal growth, as can be seen in the SEM images presented in figure 2(d).…”

Section: Crystal Structure Characterizationmentioning

confidence: 99%

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Investigation into surface composition of nitrogen-doped niobium for superconducting RF cavities

Yang¹,

Liu²,

Ye³

et al. 2021

Nanotechnology

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Systematic analysis of the surface morphology, crystalline phase, chemical composition and elemental distribution along depth for nitrogen-doped niobium was carried out using different methods of characterization, including Scanning Electron Microscopy (SEM), Atomic-Force Microscopy (AFM), Grazing Incidence X-ray Diffraction (GIXRD), Rutherford Backscattering Spectrometry (RBS) and layer-by-layer X-ray Photoelectron Spectroscopy (XPS) analysis. The results showed that, after nitrogen doping, the surface was covered by densely distributed trigonal precipitates with an average crystallite size of 32 ± 8 nm, in line with the calculation result (29.9 nm) of nitrogen-enriched β-Nb2N from GIXRD, demonstrating the phase composition of trigonal precipitates. The depth analysis through RBS and XPS indicated that β-Nb2N was dominant in the topmost 9.7 nm and extended to a depth of 575 nm, with gradually decreased content. In addition, the successive change along depth in the naturally oxidized states of niobium after nitrogen doping, was revealed. It was interesting to find that the oxygen diffusion depth could be moderately enhanced by the nitridation process. These results established the near-surface phase composition of nitrided niobium, which is of great significance in evaluating the effect of nitrogen doping and further understanding the Q improvement of the superconducting radio frequency cavities.

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Section: Depth Analysis Of Nitrogen Diffusionmentioning

confidence: 92%

Section: Crystal Structure Characterizationmentioning

confidence: 99%

Investigation into surface composition of nitrogen-doped niobium for superconducting RF cavities

Yang¹,

Liu²,

Ye³

et al. 2021

Nanotechnology

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“…[ 10 ] (B) By‐products comparison of Ar plasma cleaning and Ar/O 2 plasma cleaning. [ 21 ] (C) XPS spectra of untreated and ArH 2 plasma treated side of the coin. [ 27 ] (D) Topography of corroded Ag before and after H 2 He plasma treatment as obtained by confocal microscopy.…”

Section: Treatment Mechanism Of Multicomponent Plasmamentioning

confidence: 99%

“…[ 10 ] Plasma cleaning is influenced by two distinct mechanisms [ 20 ] : physical sputtering by high‐energy ions on the surface via momentum transfer and chemical corrosion by reactive species with energy. For example, when Ar gas was used as a plasma source to clean the hydrocarbons on the surface of niobium, [ 21 ] the work function of the sample gradually increased from 4.0 to 5.0 eV after 6 min. It showed a saturation trend, indicating that no chemical reaction occurred on the surface.…”

Section: Treatment Mechanism Of Multicomponent Plasmamentioning

confidence: 99%

Interfacial properties of multicomponent plasma‐modified high‐performance fiber‐reinforced composites: A review

et al. 2022

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This study reveals the interfacial properties of multicomponent plasma with four aspects, including cleaning, etching, functionalization, and polymerization. Particles formed by plasma ionization collide to form volatile groups, which can interact with the surface to form volatile substances that clean the surface. The multicomponent plasma etching effect on the surface is significant, and O 2 and N 2 may interact to improve oxidation capacity. Inert gas argon (Ar) can be combined with reactive gases O 2 , N 2 , and NH 3 to introduce hydroxyl and amine groups and other active groups to change the surface's chemical structure. When a multicomponent plasma polymerizes, a film forms on the surface, changing the chemical composition. The cross-linking of gases has a positive effect on the properties of the deposited layer as well. The treatment of various fiber materials, nanoparticles, polymer films, and matrix materials with multicomponent plasma is summarized. The multicomponent plasma significantly improves surface wettability and roughness, and oxygen species aid in the etching of nanomaterials, which improves interface properties. The gas types determine the groups introduced to the surface and the surface attachment site.

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“…This confirms that the relatively high work function of the Nb 2 O 5 compared to that of the MoS 2 causes electron transfer from MoS 2 to Nb 2 O 5 and opposes the movement of hole carriers from Nb 2 O 5 to MoS 2 , as demonstrated in previous studies. [48,49] Figure 3d illustrates the contact potential energy barriers of the MoS 2 and MoS 2 /Nb 2 O 5 channels with respect to Au source/drain electrodes at different resistance states. In previous studies, the resistance change of the single crystalline MoS 2 film was induced by the field-induced migration of sulfur defects and modulated the Schottky energy barrier.…”

Section: The Work Function (φ) Is Usually Defined Bymentioning

confidence: 99%

Low Power MoS₂/Nb₂O₅ Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

Nam

Jang

et al. 2021

Adv Funct Materials

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Artificial synapses based on 2D MoS2 memtransistors have recently attracted considerable attention as a promising device architecture for complex neuromorphic systems. However, previous memtransistor devices occasionally cause uncontrollable analog switching and unreliable synaptic plasticity due to random variations in the field‐induced defect migration. Herein, a highly reliable 2D MoS2/Nb2O5 heterostructure memtransistor device is demonstrated, in which the Nb2O5 interlayer thickness is a critical material parameter to induce and tune analog switching characteristics of the 2D MoS2. Ultraviolet photoelectron spectroscopy and photoluminescence analyses reveal that the Schottky barrier height at the 2D channel–electrode junction of the MoS2/Nb2O5 heterostructure films is increased, leading to more effective contact barrier modulation and allowing more reliable resistive switching. The 2D/oxide memtransistors attain dual‐terminal (drain and gate) stimulated heterosynaptic plasticity and highly precise multi‐states. In addition, the memtransistor devices show an extremely low power consumption of ≈6 pJ and reliable potentiation/depression endurance characteristics over 2000 pulses. A high pattern recognition accuracy of ≈94.2% is finally achieved from the synaptic plasticity modulated by the drain pulse configuration using an image pattern recognition simulation. Thus, the novel 2D/oxide memtransistor makes a potential neuromorphic circuitry more flexible and energy‐efficient, promoting the development of more advanced neuromorphic systems.

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The mechanism study of mixed Ar/O2 plasma-cleaning treatment on niobium surface for work function improvement

Cited by 20 publications

References 26 publications

Investigation into surface composition of nitrogen-doped niobium for superconducting RF cavities

Investigation into surface composition of nitrogen-doped niobium for superconducting RF cavities

Interfacial properties of multicomponent plasma‐modified high‐performance fiber‐reinforced composites: A review

Low Power MoS₂/Nb₂O₅ Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

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The mechanism study of mixed Ar/O2 plasma-cleaning treatment on niobium surface for work function improvement

Cited by 20 publications

References 26 publications

Investigation into surface composition of nitrogen-doped niobium for superconducting RF cavities

Investigation into surface composition of nitrogen-doped niobium for superconducting RF cavities

Interfacial properties of multicomponent plasma‐modified high‐performance fiber‐reinforced composites: A review

Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

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Product

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Low Power MoS₂/Nb₂O₅ Memtransistor Device with Highly Reliable Heterosynaptic Plasticity