Low Power MoS₂/Nb₂O₅ Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

Abstract

Artificial synapses based on 2D MoS2 memtransistors have recently attracted considerable attention as a promising device architecture for complex neuromorphic systems. However, previous memtransistor devices occasionally cause uncontrollable analog switching and unreliable synaptic plasticity due to random variations in the field‐induced defect migration. Herein, a highly reliable 2D MoS2/Nb2O5 heterostructure memtransistor device is demonstrated, in which the Nb2O5 interlayer thickness is a critical material parameter to induce and tune analog switching characteristics of the 2D MoS2. Ultraviolet photoelectron spectroscopy and photoluminescence analyses reveal that the Schottky barrier height at the 2D channel–electrode junction of the MoS2/Nb2O5 heterostructure films is increased, leading to more effective contact barrier modulation and allowing more reliable resistive switching. The 2D/oxide memtransistors attain dual‐terminal (drain and gate) stimulated heterosynaptic plasticity and highly precise multi‐states. In addition, the memtransistor devices show an extremely low power consumption of ≈6 pJ and reliable potentiation/depression endurance characteristics over 2000 pulses. A high pattern recognition accuracy of ≈94.2% is finally achieved from the synaptic plasticity modulated by the drain pulse configuration using an image pattern recognition simulation. Thus, the novel 2D/oxide memtransistor makes a potential neuromorphic circuitry more flexible and energy‐efficient, promoting the development of more advanced neuromorphic systems.

High‐Performance Memristor Based on 2D Layered BiOI Nanosheet for Low‐Power Artificial Optoelectronic Synapses

“…Furthermore, stimulated by 0.5 V electrical voltage pulse (with the PSC less than 1.2 × 10 -10 A), the operating power of our electronic synapse can be less than 60 pW, which is lower than that of many 2D materials-based synapses. [44,45] The results imply that our device is promising for low-power applications in neuromorphic computing. Thus, we can make use of a 2D layered BiOI nanosheet to achieve a low-power memristor and low-power electronic synapse based on the mechanism as discussed above, and expect to further construct low-power memory and a neuromorphic system.…”

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

“…The absorption of H 2 O and oxygen molecules from the air at the MoS 2 surface can be one possible reason. [50][51][52] In addition, charge trapping or de-trapping at the interface between the MoS 2 and the dielectric layer [9,10,[53][54][55][56] or intrinsic defects in MoS 2 [57][58][59] can also cause hysteresis. To study the origin of the large hysteresis window (129 V at ±80 V sweep range) of our MoS 2 /Ge 4 Se 9 vdW heterostructure device, we fabricated additional devices-a Ge 4 Se 9 channel-only FET device and multilayer MoS 2 channel-only FET device-for use in the control experiments.…”

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

“…The development of 2D materials in the field of memristors has a long history due to the characteristics that are beneficial to the resistance switching behaviors, such as large specific surface area, adjustable band‐gap, and high mobility. [ 165 , 166 , 167 ] A large number of researchers have found the resistive switching behavior in 2D materials, such as graphene and its derivatives, [ 128 , 168 , 169 ] molybdenum disulfide, [ 170 , 171 ] tungsten disulfide, [ 172 , 173 ] and hexagonal boron nitride, [ 174 , 175 ] while the 2D materials are not performed in photonic memristive devices until its concept is proposed in recent years. Even though there are many methods to prepare 2D materials, such as mechanical peel‐off, chemical vapor deposition and sol–gel process, the performances of the 2D materials prepared by various methods are different in memristor due to the limitations of the preparation conditions, which means that the optimization potential of the same 2D material in the photonic memristive and memristive‐like devices is enormous.…”