The Mechanism of Performance Variations in MoS<sub>2</sub> Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory

Zhang, Xisai; Duan, Xinpei; Niu, Wencheng; Liu, Xingqiang; Zou, Xuming; Huang, Hao; Mudiyanselage, Dinusha Herath; Fu, Houqiang; Jiang, Bei; Liu, Guoxia; Yang, Zhenyu

doi:10.1109/ted.2022.3202149

Cited by 6 publications

(3 citation statements)

References 41 publications

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“…where q is the electron charge, k B is the Boltzmann constant, T is the Kelvin temperature. [33,34] The calculated ideality factor is 1.12.…”

Section: Resultsmentioning

confidence: 96%

“…In order to calculate the ideality factor of the forward‐biased region, the Shockley diode equation is simplified as follows:

\begin{equation}\eta = \frac{q}{{{k}_BT\left\{ {\frac{{d\left( {lnI} \right)}}{{dV}}} \right\}}}\end{equation}

where q is the electron charge, k B is the Boltzmann constant, T is the Kelvin temperature. [ 33,34 ] The calculated ideality factor is 1.12. The ideality factor represents the ideality of the Schottky diode, and the closer it is to 1, the more ideal the diode is.…”

Section: Resultsmentioning

confidence: 99%

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High Performance Self‐Driven Photodetectors Based on MoS₂ Schottky Barrier Diode

Dai,

Wu,

Wang

et al. 2023

Advanced Optical Materials

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Practical application of two‐dimensional transition metal dichalcogenides (2D TMDCs) involves creating a p‐n diode and a Schottky diode. Unlike p‐n diodes, the research of 2D material‐based Schottky diodes especially in the application field of photodetectors is lacking. Here, a Schottky diode is fabricated by depositing Pt and Ni on the MoS2 to form Schottky and ohmic contacts, respectively. The MoS2 Schottky diode exhibits a rectification ratio of 2.36 × 103 and an ideality factor of 1.12. The electrical characteristics of Ni‐MoS2‐Ni and Pt‐MoS2‐Pt field effect transistors are systematically compared. The Schottky barrier height is estimated to be 94.2 meV by using the thermionic emission theory. The Schottky diode device can exhibit excellent self‐powered photodetection performance in the visible to near‐infrared region (447‐940 nm) due to the strong built‐in electric field originating from the Schottky barrier at the MoS2/Pt interface. The maximum detectivity reaches 2.09 × 1012 Jones with a response time of 52.6 ms under 940 nm laser illumination. Furthermore, the photodetection performance of such a Schottky diode can be further improved by NH3 plasma doping treatment. This work provides not only a simple approach to construct a 2D materials‐based Schottky diode photodetector but also a post treatment technique to further improve the device performance.

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“…where q is the electron charge, k B is the Boltzmann constant, T is the Kelvin temperature. [33,34] The calculated ideality factor is 1.12.…”

Section: Resultsmentioning

confidence: 96%

“…In order to calculate the ideality factor of the forward‐biased region, the Shockley diode equation is simplified as follows:

\begin{equation}\eta = \frac{q}{{{k}_BT\left\{ {\frac{{d\left( {lnI} \right)}}{{dV}}} \right\}}}\end{equation}

Section: Resultsmentioning

confidence: 99%

High Performance Self‐Driven Photodetectors Based on MoS₂ Schottky Barrier Diode

Dai,

Wu,

Wang

et al. 2023

Advanced Optical Materials

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“…2D materials such as graphene and MoS 2 are promising optoelectronic materials and important supplements to mainstream semiconductor materials due to their unique physical properties, which result in their more sensitive optoelectronic characteristics than other materials. , In this article, we display the optoprogramming and optoerasing capabilities with different gate voltage pulses due to their photoelectric coupling effect in the MoS 2 /h-BN/graphene vdW heterojunction transistor. Figure a shows the configuration information.…”

Section: Resultsmentioning

confidence: 99%

Microneural Network System Based on MoS₂/h-BN/Graphene van der Waals Heterojunction Transistor

Liu,

Wang,

Huang

et al. 2023

ACS Appl. Nano Mater.

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The integration of data storage and computing capabilities into a single physical component has led to the development of a microneuronal network system with high precision and speed rates. To achieve this system architecture, bold innovations in the underlying hardware structure and neural network architecture are required. This article introduces an optoelectronic storage device based on the MoS2/h-BN/graphene van der Waals heterojunction transistor. At room temperature, the transistor exhibits an electron mobility of up to 340 cm2/(V·s) and a large storage window due to its unique van der Waals heterojunction. The transistor’s reconfigurable nonvolatile optoelectronic properties enable the construction of logic gates, including “AND”, “OR”, “NAND”, and “NOR”. Leveraging these logic gates, a microneural network system is created that simulates future machine vision applications. The system achieves a remarkable recognition rate of 96.3% for images in a multidimensional color space, demonstrating the significant development potential of the microneural network system based on the MoS2/h-BN/graphene vdW heterojunction transistor in future machine vision.

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Asymmetric Schottky contacts induced via localized ultrafast laser irradiation for ultrasensitive, self-powered, 2D photodetectors

Peng,

Zou,

Huo

et al. 2023

Nano Energy

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The Mechanism of Performance Variations in MoS₂ Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory

Cited by 6 publications

References 41 publications

High Performance Self‐Driven Photodetectors Based on MoS₂ Schottky Barrier Diode

High Performance Self‐Driven Photodetectors Based on MoS₂ Schottky Barrier Diode

Microneural Network System Based on MoS₂/h-BN/Graphene van der Waals Heterojunction Transistor

Asymmetric Schottky contacts induced via localized ultrafast laser irradiation for ultrasensitive, self-powered, 2D photodetectors

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The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory

Cited by 6 publications

References 41 publications

High Performance Self‐Driven Photodetectors Based on MoS2 Schottky Barrier Diode

High Performance Self‐Driven Photodetectors Based on MoS2 Schottky Barrier Diode

Microneural Network System Based on MoS2/h-BN/Graphene van der Waals Heterojunction Transistor

Asymmetric Schottky contacts induced via localized ultrafast laser irradiation for ultrasensitive, self-powered, 2D photodetectors

Contact Info

Product

Resources

About

The Mechanism of Performance Variations in MoS₂ Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory

High Performance Self‐Driven Photodetectors Based on MoS₂ Schottky Barrier Diode

High Performance Self‐Driven Photodetectors Based on MoS₂ Schottky Barrier Diode

Microneural Network System Based on MoS₂/h-BN/Graphene van der Waals Heterojunction Transistor