Microneural Network System Based on MoS₂/h-BN/Graphene van der Waals Heterojunction Transistor

Abstract

The integration of data storage and computing capabilities into a single physical component has led to the development of a microneuronal network system with high precision and speed rates. To achieve this system architecture, bold innovations in the underlying hardware structure and neural network architecture are required. This article introduces an optoelectronic storage device based on the MoS2/h-BN/graphene van der Waals heterojunction transistor. At room temperature, the transistor exhibits an electron mobility of up to 340 cm2/(V·s) and a large storage window due to its unique van der Waals heterojunction. The transistor’s reconfigurable nonvolatile optoelectronic properties enable the construction of logic gates, including “AND”, “OR”, “NAND”, and “NOR”. Leveraging these logic gates, a microneural network system is created that simulates future machine vision applications. The system achieves a remarkable recognition rate of 96.3% for images in a multidimensional color space, demonstrating the significant development potential of the microneural network system based on the MoS2/h-BN/graphene vdW heterojunction transistor in future machine vision.

Recent Progress of Polymeric Dielectrics in Molybdenum Disulfide-Based Devices

“…As we all know, a typical field-effect transistor (FET) is usually composed of gate electrodes, dielectrics, active layers, and drain and source electrodes . Thereinto, metal electrodes and inorganic dielectrics are commonly prepared using high-energy preparation techniques, such as vacuum thermal evaporation, ,,,, e-beam evaporation, ,,, atomic layer deposition, ,, and so on. In general, high-energy atoms or atomic clusters will repeatedly bomb the contact area, resulting in many interface damage, defects, and surface states at the interface between metal and semiconductor, which will further affect the injection and transport of charge carriers .…”

“…Thus, it is urgent to find a new class of materials to overcome these technical problems. With the nature of ultrathin thickness, dangling-free bonds and tunable band structure, transition metal dichalcogenides (TMDCs) have shown excellent electrical properties, unique optoelectronic properties, and mechanical flexibility that could be transferred to arbitrary substrates, which are becoming one of the most promising materials to replace traditional silicon-based materials. − Thereinto, molybdenum disulfide (MoS 2 ) with a typical layered structure is widely studied. − According to current progress, MoS 2 possesses the thickness-dependent energy band to widen its absorption spectrum and the large surface-to-volume ratio to assist charge trapping, which lay a good foundation for the development of optoelectronic devices for sensors, − displays, − recognition, − and other diversified applications. − Furthermore, air-stabilized MoS 2 could overcome the phonon scattering through the interface engineering to obtain ultrahigh electrical properties at room temperature and achieve the large-size growth by the regulation of preparation process, which provide advantages for the development of large-scale miniaturized integrated circuits. , Markedly, MoS 2 -based flexible integrated logic circuits as the optimization of the growth process have been successfully studied, which obtained good device yield and excellent electrical performance with the mobility of 55 cm 2 V –1 s –1 , high on/off ratios of 10 10 , and current densities of 35 μA μm –1 …”