Asymmetric Schottky contacts induced via localized ultrafast laser irradiation for ultrasensitive, self-powered, 2D photodetectors

Peng, Jin; Zou, Guisheng; Huo, Jinpeng; Xiao, Yu; Sun, Tianming; Li, Zehua; Feng, Bin; Liu, Lei

doi:10.1016/j.nanoen.2023.108891

Cited by 10 publications

(2 citation statements)

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“…Notably, the photodiode exhibits evident photovoltaic behavior upon UV illumination with different wavelengths, indicating that the device could be operated as a self-powered photodetector. 39 Considering ∼4.5 eV and 4.0 eV work functions for 1T′-MoTe 2 and GaN, a Schottky contact is formed at the 1T′-MoTe 2 /GaN interface. 33,40 The absorption spectra of GaN and 1T′-MoTe 2 /GaN (Fig.…”

Section: Resultsmentioning

confidence: 99%

A 1T′-MoTe₂/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

Gao,

Yang,

et al. 2024

Nanoscale

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Section: Resultsmentioning

confidence: 99%

A 1T′-MoTe₂/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

Gao,

Yang,

et al. 2024

Nanoscale

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“…In such a device, upon illumination with a certain wavelength of light, the photocurrent can still be detected without any external power source. So far, the commonly seen self-powered PDs utilize the built-in electric field of p–n junctions , or Schottky junctions ,,, to improve the separation efficiency of photogenerated electron–hole pairs and achieve the photocurrent by the directional movement of photogenerated carriers at zero bias voltage. Up to now, whether the CdPSe 3 /MoS 2 heterostructure-based device could demonstrate a photoelectric response at zero bias still remains unknown.…”

Section: Introductionmentioning

confidence: 99%

Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe₃/MoS₂

Yang,

Song,

Zhao

et al. 2024

ACS Appl. Mater. Interfaces

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Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Emelianov,

Pettersson,

Bobrinetskiy

2024

Advanced Materials

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Ultrafast laser processing has emerged as a versatile technique for modifying materials and introducing novel functionalities. Over the past decade, this method has demonstrated remarkable advantages in the manipulation of 2D layered materials, including synthesis, structuring, functionalization, and local patterning. Unlike continuous‐wave and long‐pulsed optical methods, ultrafast lasers offer a solution for thermal heating issues. Nonlinear interactions between ultrafast laser pulses and the atomic lattice of 2D materials substantially influence their chemical and physical properties. This paper highlights the transformative role of ultrafast laser pulses in maskless green technology, enabling subtractive, and additive processes that unveil ways for advanced devices. Utilizing the synergetic effect between the energy states within the atomic layers and ultrafast laser irradiation, it is feasible to achieve unprecedented resolutions down to several nanometers. Recent advancements are discussed in functionalization, doping, atomic reconstruction, phase transformation, and 2D and 3D micro‐ and nanopatterning. A forward‐looking perspective on a wide array of applications of 2D materials, along with device fabrication featuring novel physical and chemical properties through direct ultrafast laser writing, is also provided.

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Asymmetric Schottky contacts induced via localized ultrafast laser irradiation for ultrasensitive, self-powered, 2D photodetectors

Cited by 10 publications

References 69 publications

A 1T′-MoTe₂/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

A 1T′-MoTe₂/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe₃/MoS₂

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

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Asymmetric Schottky contacts induced via localized ultrafast laser irradiation for ultrasensitive, self-powered, 2D photodetectors

Cited by 10 publications

References 69 publications

A 1T′-MoTe2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

A 1T′-MoTe2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe3/MoS2

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

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Product

Resources

About

A 1T′-MoTe₂/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

A 1T′-MoTe₂/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe₃/MoS₂