The mechanism for the high-quality single-phase growth of MnSi films on Si (111) in the presence of Sb flux

Abstract

The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb–Mn–Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.

Formation of MnSb during the growth of MnSi layers in the presence of an Sb flux

“…16 Figure 3͑a͒ shows a Z-contrast image of the MnSi/Si interface viewed along the ͓110͔ zone axis of Si. In Z-contrast images, the intensity is proportional to the atomic number.…”

Surfactant mediated growth of MnSi1.7 on Si(001)

“…It is found that the presence of Sb during the growth strongly increases the island density and changes the crystalline orientation of the MnSi 1.7 . 6 However, up to now it has not been shown that for the silicide growth the primary requirements for surfactant mediated growth is fullfilled: the surfactant should segregate to the surface avoiding its incorporation into the growing film. A residual Sb coverage close to one monolayer at the sample surface has been determined for both of the preparation conditions.…”