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The interface structure of epitaxial cobalt disilicide thin films buried in (001) silicon was studied by dedicated aberration-corrected scanning transmission electron microscopy. Two different CoSi2∕Si interface structures, one representing a (2×1) reconstruction containing sevenfold coordinated Co and the other, a (1×1) structure containing eightfold coordinated Co, were unequivocally identified. The reconstructed sevenfold interface structure was observed more frequently than the (1×1) eightfold interface, which confirms first-principles total-energy calculations. Further, the atomic arrangement found in the eightfold interface reveals an atomic displacement, which is due to relaxation and has been predicted theoretically as well. Complex defect structures at interface domain boundaries are described.

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Sb is used as a surfactant for the growth of MnSi1.7 by reactive deposition of Mn on Si(001). It is found that the presence of Sb during the growth strongly increases the island density and changes the crystalline orientation of the MnSi1.7. The morphology and structure of the resulting silicide are the same both for the deposition of Mn only on a Sb-terminated Si(001) surface and for the codeposition of Mn and Sb on Si(001). A residual Sb coverage close to one monolayer at the sample surface has been determined for both of the preparation conditions.