Growth of MnSi1.7 on Si(001) by MBE

The growth of manganese layers on Si(100) at room temperature: A photoelectron spectroscopy study

“…However, the doping of Si is hampered by the extremely low solubility of Mn in Si, the preference of Mn for interstitial lattice sites over the electronically active substitutional sites, and the competition with silicide formation [6,[9][10][11][12][13][14][15]. In order to circumvent these problems we are investigating the feasibility of a surface-driven approach for the incorporation of Mn into a Si matrix.…”

The novel eutectic microstructures of Si–Mn–P ternary alloy

“…The subcells are nearly equal for all HMS with changing the translational symmetry of Si positions in Table 1 The stoichiometry of each phase marked in Fig. 1 the c-axis direction [18,19]. The main elements in the shallow color phase of the eutectic structure marked B are manganese and phosphorous, it is considered to be MnP compound according to the atomic ratio since the max number of phases in one ternary system is no more than four [20].…”

Synthesis and Magnetic Properties of Mn4Si7 and Si–Mn4Si7 Axial Heterostructure Nanowire Arrays

“…On the other hand, as an important semiconductor in manganese silicides, the higher manganese silicides (HMS) − own a direct band gap of about 0.7 eV and are potential materials for many optoelectronic applications. , At least eight phases of HMS have been reported in the previous literatures, including Mn 4 Si 7 , Mn 11 Si 19 , Mn 15 Si 26 , Mn 27 Si 47 , Mn 7 Si 12 , Mn 19 Si 33 , Mn 26 Si 45 , and Mn 39 Si 68 . ,− These different HMS phases have the same Nowotny chimney ladder (NCL) structure but differ from each other in trial in lattice constants, while the HMS own similar physical and chemical properties. It was reported that the HMS are good thermoelectric materials with figures of merit (ZT) up to 0.7–0.8. , Besides, the HMS MnSi 2– x ( x ≈ 0.25) can be a good candidate as a ferromagnetic semiconductor. ,, Furthermore, the small lattice mismatch of about +1.8% between the a -axis (≈0.552 nm) of the HMS and Si would be beneficial to epitaxially grow HMS on Si, which is a critical foundation to develop Si-based optoelectronic devices.…”