The growth of manganese layers on Si(100) at room temperature: A photoelectron spectroscopy study

Ab initiostudy of the magnetic ordering in Si/Mn digital alloys

“…The main problem here is similar to that arising in the case of deposition of Mn layers onto the Si surface, when the formation of a silicide ultrathin interface at the boundary between the Si substrate and the Mn layer destroys the magnetic overlayer homogeneity. [19][20][21][22] Nevertheless, under suitable growth conditions, Mn can form a two-dimensional row-like structure, which could be useful for achieving δ-layer doping of silicon by manganese. 20 In this study, Mn was found to be incorporated into Si as an interstitial dopant in good agreement with recent first-principles calculations.…”

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

“…This is clear by considering the VB of SiO 2 shown Fig. 3-c and by discussing the spectral features at the light of recent papers on the Mn-Si(100) interface such as [40]. The Si spectral weight in the valence band region was shown to be distributed in three regions, roughly ranging from 0 to 5, from 5 to 8, and from 8 to 12 eV, respectively.…”

“…According to Ref. [40], when doped with Mn, the first region remarkably changed, due to the presence of the Mn-derived spectral weight. We find similar effects in our samples, supporting the conclusion of silicide formation.…”

Структура Термоэлектрических Пленок Высшего Силицида Марганца На Кремнии По Данными Электронной Микроскопии

“…Образование наноразмерных округлых выделений мо-носилицида марганца, выявленных в островках ВСМ объемом свыше 1000 мкм 3 , по-видимому, может быть связано с формированием объемного сростка относи-тельно больших зерен ВСМ, для которых характерно выделение паразитной фазы MnSi.…”

“…Тонкие пленки силицидов переходных металлов, в том числе высших силицидов марганца (ВСМ), уже находят применение в современной микро-и наноэлектронике, оптоэлектронике, микросенсорике и других областях со-временной техники [1][2][3][4]. Показана возможность созда-ния пленочных термобатарей и других термоэлементов на основе ВСМ на кремнии [5].…”