The built-in electrical potential of Cu(In,Ga)Se2 (CIGS) solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy. Profiles of the electrical potential along cross sections of the device demonstrate that the p–n junction is a buried homojunction, and the p/n boundary is located 30–80 nm from the CIGS/CdS interface in the CIGS film. The built-in electric field terminates at the CIGS/CdS interface, indicating that the CdS and ZnO layers of the device structure are inactive for the collection of photoexcited carriers.

The effects of CdCl2 processing on the physical and electro-optical properties of CdTe were evaluated for thin films produced by physical vapor deposition and close-spaced sublimation (CSS). Two substrates (CdS and Indium–tin–oxide) were used with the physical vapor deposition (PVD) films specifically to isolate the effects of the Cd(SxTe1−x) alloy formed during the treatment of films deposited on CdS. The samples were analyzed by x-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence. The observed changes in microstructure were caused by recrystallization, which consisted of the nucleation and development of a new CdTe structure and subsequent grain growth. Nevertheless, for these processes to take place, it was necessary that enough lattice-strain energy was available in the films. For this reason, PVD films did recrystallize, while CSS films did not. For the first time, recrystallization was observed directly in AFM images of CdTe films and confirmed by XRD analysis, which indicated the existence of two lattice parameters in PVD samples treated at 350 °C. For samples treated at 400 °C, the CdCl2 treatment improved the minority-carrier lifetime of the films by more than one order of magnitude. This improvement was attributed to the elimination of deep defect levels within the band gap of the CdTe films as a result of the treatment. The sulfur diffusion into CdTe films deposited on CdS, during the CdCl2 treatment at 400 °C, strongly affected the defect structure.

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We report direct observation of the existence of buried thin wurtzite CdTe layers in nominally pure zinc-blende CdTe thin films using high-resolution transmission electron microscopy. The formation of the buried wurtzite layers is a result of the formation of high density of planar defects in the zinc-blende films—the wurtzite layers are formed by closely spaced lamellar twins. First-principles calculations reveal that the presence of the buried wurtzite layers may be responsible for the poor electrical properties of the polycrystalline zinc-blende CdTe films.

We report on direct measurements of the built-in electrical potential in III–V semiconductor-based solar cell devices by using scanning Kelvin probe microscopy. Potential profiles on cross sections of the devices were measured quantitatively and spatially resolved in open and short circuits, under and without illuminations, with selective photon energies matching band gaps of the junctions. The measurements provide valuable information about the electrical properties of the devices, and are useful for understanding the performance of solar cells. On a GaInP2-single junction cell, two potential features were measured and were assigned to the p-n junction and the potential barrier at the interface between the GaInP2 base layer and the GaAs substrate. The potential on the p-n junction is photoactive, and that on the GaInP2/GaAs interface is photoinactive. On a GaInP2/GaAs tandem cell, two potential features were measured near the top and the bottom p-n junctions. When the sample was illuminated by light with photon energies larger than the band gap of the top junction, in the condition of short circuit, a potential peak appeared on the boundary between the bottom cell and tunnel junction due to charge accumulations on the bottom junction.