The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation

Karel, F.; Pastrňák, J.

doi:10.1007/bf01698106

Cited by 27 publications

(9 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar observations have also been made by Karel and Pastrnak [10], who found that an efficient excitation of luminescence in the NUV region requires photon energies above 4 eV. We relate this effect to a strong electron-phonon coupling of the underlying defects.…”

Section: Recombination Mechanism Of the Vl A Bandsupporting

confidence: 74%

Ultraviolet luminescence in AlN

Schulz

Albrecht

Irmscher

et al. 2011

Physica Status Solidi (b)

View full text Add to dashboard Cite

The defect related luminescence in the near UV region between 3 and 4 eV has been investigated in insulating, n-type and irradiation damaged AlN. A single luminescence band around 3.3 eV with a full width at half maximum of more than 500 meV, is attributed to a donor-acceptor pair transition at low temperatures. The substantial linewidth and a Stokes shift of around 1.3 eV result from strong electron-phonon coupling of the deep acceptor. While the chemical nature of the donor remains ambiguous, the acceptor species is attributed to the isolated Al vacancy, i.e. V 3ÀAl . This luminescence band might be interesting for studying n-type compensation mechanisms in AlN.

show abstract

Section: Recombination Mechanism Of the Vl A Bandsupporting

confidence: 74%

Ultraviolet luminescence in AlN

Schulz

Albrecht

Irmscher

et al. 2011

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Early studies identified visible luminescence bands resulting from doping AlN powder with Mn, 9 and the rare earths Sm and Eu. 10 More recent studies have identified several sharp near-infrared zero-phonon luminescence lines with additional specific 3d transition element impurities, [11][12][13][14] taking advantage of their close similarity to lines that had previously been studied in more detail in GaN. 11,12,[15][16][17] In addition, an EPR and optical absorption study in neutron-irradiated polycrystalline material has correlated an absorption band at 370 nm with an EPR signal at g ϭ2.007.…”

Section: Introductionmentioning

confidence: 91%

Optically detected electron paramagnetic resonance of AlN single crystals

et al. 1999

View full text Add to dashboard Cite

AlN single crystals have been investigated using photoluminescence ͑PL͒ and optical detection of electron paramagnetic resonance in the PL ͑ODEPR͒. All crystals were found to exhibit intense PL extending from the visible into the near infrared. Several Sϭ1 centers, each with its own distinct emission spectrum, and distant Sϭ1/2 pair recombination centers have been observed via ODEPR. In all except one center, D5, no hyperfine structure was observed preventing chemical identification of the impurity involved. In the case of D5 the partially resolved hyperfine structure suggests interaction with a 100% abundant nucleus of Iϳ5/2. We present arguments to associate it with a displaced host aluminum atom.

show abstract

“…Based on such a feature of the reaction, we can assume that the AlN particles are formed by two major processes in the method of this study: (1) generation of small single crystal nuclei while a partial pressure of AlCl 3 (P(AlCl 3 )) is kept high just after mixing with NH 3 , and (2) dominating particle growth as P(AlCl 3 ) decreases due to consumption of source. According to this model, a higher P(NH 3 ) is also expected to enhance the process (1). As can be seen in Fig.…”

Section: Contributedmentioning

confidence: 82%

“…To this effect, the control of luminescence from GaN and AlN particles has been carried out. Conventionally, it has been achieved by doping of impurity atoms such as transition or rareearth metal as luminescent centers [1][2][3][4][5][6]. These atoms form electronic energy states in a host crystal, resulting in radiative transitions between them.…”

mentioning

confidence: 99%

Fabrication of AlN single crystal particles by a chemical vapor method using aluminum chloride

Mori

Kobayashi

Kawanishi

et al. 2011

Phys. Status Solidi C

View full text Add to dashboard Cite

The synthesis of single crystal AlN particles has been carried out by the chemical vapor method using AlCl3 and NH3 as sources at 1450 °C. The x‐ray diffraction (XRD) measurement reveals that the samples are AlN in the wurtzite structure. The XRD line width had its minimum around partial pressure of NH3 (P (NH3)) of 0.25 atm, indicating the highest crystal quality among the samples synthesized in this study. The powders prepared at P (NH3) between 0.13 and 0.38 atm consisted mostly of particles with sizes ranging between approximately 100 and 500 nm. The particles in these samples had specific shapes with a sixfold symmetry reflecting the wurtzite crystal structure of AlN. The observation of particle morphology has also suggested that the particles composed of two crystal grains are included in the samples. The mechanism of particle formation was discussed based on the dependence of particle morphology on P (NH3). Comparison with the synthesis using vaporized Al as an Al source leads us to conclude that the use of AlCl3 is essential to the efficient formation of single crystal particles. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation

Cited by 27 publications

References 16 publications

Ultraviolet luminescence in AlN

Ultraviolet luminescence in AlN

Optically detected electron paramagnetic resonance of AlN single crystals

Fabrication of AlN single crystal particles by a chemical vapor method using aluminum chloride

Contact Info

Product

Resources

About