Aluminum
nitride (AlN) is highly insulating and has a high thermal
conductivity. AlN also has the advantages of being nontoxic and chemically
stable. Therefore, it is a suitable sealing material for electric
devices. Previous studies have shown that the addition of NH4Cl has a large influence on the formation of AlN and can effectively
be used in its low-temperature synthesis without the use of special
equipment. However, it has not been clarified whether NH4Cl simply promotes the reaction between Al and nitrogen or directly
contributes to the nitridation reaction. In this study, which was
part of a series of studies on the development of low-temperature
synthesis methods for AlN, the nitridation behaviors of Al in Al–N2, Al–NH4Cl–N2, and Al–NH4Cl–He systems were determined, and the effects of the
heating temperature and amount of NH4Cl on the nitridation
behavior were examined in detail. When NH4Cl was added,
AlN began to form at 600 °C, a formation temperature that was
approximately 200 °C lower than that when only Al powder was
heated under a nitrogen stream. The fact that the formation of AlN
was also observed when the NH4Cl-added Al powder was heated
under a helium gas stream confirmed that nitrogen derived from NH4Cl contributed to the formation of the AlN. Furthermore, based
on the experimental results, the reaction mechanism was clarified,
and the kinetic parameters for the nitridation of Al were determined.