The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

Abstract

Low-frequency noise properties have been investigated for SiGe p-type metal-oxidesemiconductor field effect transistors with different substrates using Si bulk and a partially depleted silicon-on-insulator (PD SOI). The electrical properties of SiGe PD SOI were enhanced in the subthreshold slope and drain induced barrier lowering. However, the low-frequency noise for the PD SOI was found to degrade significantly in terms of the power spectral density. The low frequency noise was observed to follow the typical 1/f γ (γ = 1) dependence in SiGe bulk devices, but abnormal changes with γ = 2 were revealed in the SiGe PD SOI. The difference of the noise frequency exponent was mainly attributed to generation-recombination by traps presented at the silicon-oxide interface of the SOI. Regardless of the degraded noise performance in the SOI structure, the low-frequency noise level remained well at an acceptable level by virtue of the effective carrier confinement in the SiGe channel.

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

“…5 shows the noise power spectral density (PSD) for the SiGe bulk and the SiGe PD SOI measured in a broad frequency range of 10-10 4 Hz. The 1/f noise was measured while the drain was biased with À3 V and the gate overdrive was À0.5 V. When we set V DS = À5 V, the accelerated carriers at the increased drain bias lead to impact ionization which generated hot-carriers [9]. As shown in Fig.…”

Performances of accumulation-mode n- and p-MOSFETs on Si(110) wafers

“…Additionally, all the Hooge parameter values were found between 10 −5 and 10 −3 , which are consistent with data obtained in the literature. 6,43,[52][53][54] With the exception of the inversion-mode n-MOSFET, note that the Hooge parameter values are almost constant in the entire measurement range, indicating that for these devices, the noise can either be explained in terms of fluctuations of the oxide charge, ΔQ ox , and the induced mobility fluctuations Δμ ind , or in terms of the fundamental fluctuations of mobility in the Hooge theory since the Hooge parameter is constant for a given technology and independent of the operating conditions. Results shown in Fig.…”