The intrinsic thermal conductivity of AIN

Slack, Glen A.; Tanzilli, R. A.; Pohl, Robert Wichard; Vandersande, Jan W.

doi:10.1016/0022-3697(87)90153-3

Cited by 902 publications

(487 citation statements)

References 37 publications

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“…Open green circles are the experimental κ L along the c-axis for AlN [70]. The isotope mixtures for Al and N are negligible so we do not give κ natural for AlN.…”

Section: Silicon Carbide and Aluminum Nitridementioning

confidence: 99%

Ab initiothermal transport in compound semiconductors

2013

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We use a recently developed ab initio approach to calculate the lattice thermal conductivities of compound semiconductors. An exact numerical solution of the phonon Boltzmann transport equation is implemented, which uses harmonic and anharmonic interatomic force constants determined from density functional theory as inputs. We discuss the method for calculating the anharmonic interatomic force constants in some detail, and we describe their role in providing accurate thermal conductivities in a range of systems. This first-principles approach obtains good agreement with experimental results for well-characterized systems (Si, Ge, and GaAs).We determine the intrinsic upper bound to the thermal conductivities of cubic aluminum-V, gallium-V, and indium-V compounds as limited by anharmonic phonon scattering. The effects of phonon-isotope scattering on the thermal conductivities are examined in these materials and compared to available experimental data. We also obtain the lattice thermal conductivities of other technologically important materials, AlN and SiC. For most materials, good agreement with the experimental lattice thermal conductivities for naturally occurring isotopic compositions is found. We show that the overall frequency scale of the acoustic phonons and the size of the gap between acoustic and optic phonons play important roles in determining the lattice thermal 2 conductivity of each system. The first-principles approach used here can provide quantitative predictions of thermal transport in a wide range of systems. 63.20.kg,

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“…Open green circles are the experimental κ L along the c-axis for AlN [70]. The isotope mixtures for Al and N are negligible so we do not give κ natural for AlN.…”

Section: Silicon Carbide and Aluminum Nitridementioning

confidence: 99%

Ab initiothermal transport in compound semiconductors

2013

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“…Aluminium nitride (AlN) has very high RT thermal conductivity for a ceramic, second only to beryllia, with an intrinsic thermal conductivity of 319 W m −1 K −1 along the c-axis at 300 K [22], high-purity single crystal RT thermal conductivity of 285 W m −1 K −1 along the c-axis [22], and sintered body RT thermal conductivities over 265 W m −1 K −1 reported [23,24], although careful control of material composition and processing conditions is required to produce high thermal conductivity bodies [25]. The thermal shock resistance of aluminium nitride is even higher than that of beryllia due to its lower coefficient of thermal expansion, closely matched to that of silicon.…”

Section: Aluminium Nitridementioning

confidence: 99%

A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

et al. 2011

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The current review uses the material requirements of a new space propulsion device, the Variable Specific Impulse Magnetoplasma Rocket (VASIMR ® ) as a basis for presenting the temperature dependent properties of a range of dielectric ceramics, but data presented could be used in the engineering design of any ceramic component with complementary material requirements. A material is required for the gas containment tube (GCT) of VASIMR ® to allow it to operate at higher power levels. The GCT's operating conditions place severe constraints on the choice of material. A dielectric is required with a high thermal conductivity, low dielectric loss factor, and high thermal shock resistance. There is a lack of a representative set of temperature-dependent material property data for materials considered for this application and these are required for accurate thermo-structural modelling. This modelling would facilitate the selection of an optimum material for this component. The goal of this paper is to determine the best material property data values for use in the materials selection and design of such components. A review of both experimentally and theoretically-determined temperature-dependent & room temperature properties of several materials has been undertaken. Data extracted are presented by property. Properties reviewed are density, Young's, bulk and shear moduli, Poisson's ratio, tensile, flexural and compressive strength, thermal conductivity, specific heat capacity, thermal expansion coefficient and the factors affecting maximum service temperature. Materials reviewed are alumina, aluminium nitride, beryllia, fused quartz, sialon and silicon nitride.

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“…Oxygen subtitutes for nitrogen in AlN and aluminium vacancies are created as a direct consequence of the compensation of oxygen impurities [1,3]. In principle, one triply negative Al vacancy is required for three positive donors to satisfy charge nutrality after incroporation of oxygen donors [4].…”

Section: Introductionmentioning

confidence: 99%

“…Oxygen is incorporated in AlN via lattice dissolution and appears to be a subtitutional impurity [1]. AlN has the ability to accommodate oxygen to levels exceeding 4 at.%.…”

Section: Introductionmentioning

confidence: 99%