The Interactions of Point Defects with Impurities in Silicon

Hirata, Mitsuji; Saito, Haruo

doi:10.1143/jpsj.27.405

Cited by 87 publications

(27 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…(7.2) Hirata, Hirata, and Saito (1969) provided the values for P V, As V, Sb V, and BiV pairs migrating in the temperature range 150 -250'C. Elkin and Watkins (1968) presented data for P V, As V, and Sb V in the temperature range ( -17) -100 C which show excellent agreement with the data of Hirata et aI.…”

Section: B Experimental Determination Of Defect Migration Energiessupporting

confidence: 59%

“…Mathiot and Pfister (1982). Hirata, Hirata, and Saito (1969) studied the difFerent annealing behavior of irradiated samples that contained group-V dopants: P, As, Sb, and Bi. Comparing their results with other works for P, As, and Sb (Elkin and Watkins, 1968) and P (Kimmerling,DeAngelis,and Diebold,197S) There are a few problems with the concept of a Coulombic potential applied to a dopant atom and point defect interacting in proximity.…”

Section: Percolation Phenomenonmentioning

confidence: 99%

See 1 more Smart Citation

Point defects and dopant diffusion in silicon

1989

View full text Add to dashboard Cite

Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

show abstract

Section: B Experimental Determination Of Defect Migration Energiessupporting

confidence: 59%

Section: Percolation Phenomenonmentioning

confidence: 99%

Point defects and dopant diffusion in silicon

1989

View full text Add to dashboard Cite

show abstract

“…As mentioned before, i t was found by Rimini, Haskell and Nayer (1972) that in the case of antimony this ' collision ' process does not cause the impurity atom t o move to off lattice positions. In some irradiation annealing studies the annealing effects have been shown to be related to the covalent radius of the atoms (Hirata, Hirata and Saito 1969). It is thus considered possible that the displacement effects could also be governed by a similar atom-size effect : at the moment, however, there is insufficient evidence to verify this suggestion.…”

Section: Jet Etching Resultsmentioning

confidence: 99%

A study of 2 MeV helium-irradiated phosphorus-diffused silicon

Allen

Bicknell

1974

Philosophical Magazine

View full text Add to dashboard Cite

“…Hirata et al [19] and Kimerling et al [20] created V-P pairs by irradiating lightly doped FZ n-type wafers using a Co 60 gamma-ray source at room temperature; thus, allowing them to investigate the annealing characteristics of the V-P defect. Dannefaer et al [12] utilized the same approach to create vacancies; however, they used n-type Cz wafers with an oxygen concentration of 1 × 10 18 cm −3 .…”

Section: B Activation Energy For Annihilation Of the First-stage Defectmentioning

confidence: 99%

Evidence for Vacancy-Related Recombination Active Defects in as-Grown N-Type Czochralski Silicon

Zheng

Rougieux

Grant

et al. 2015

IEEE J. Photovoltaics

View full text Add to dashboard Cite

Abstract-A recombination of active defect in very high lifetime Czochralski grown n-type silicon wafers, which can be thermally deactivated at 150°C, is described. In addition, the existence of a recently measured defect, which is deactivated at 350°C, is confirmed. Both defects are found to significantly degrade the lifetime of millisecond-range Czochralski-grown n-type silicon wafers: a material widely used for high-efficiency solar cells. The observed deactivation temperature suggests that it may be caused by vacancy-phosphorus pairs. The deactivation temperature of the second defect is consistent with the presence of vacancy-oxygen (V-O) pairs.

show abstract

The Interactions of Point Defects with Impurities in Silicon

Cited by 87 publications

References 15 publications

Point defects and dopant diffusion in silicon

Point defects and dopant diffusion in silicon

A study of 2 MeV helium-irradiated phosphorus-diffused silicon

Evidence for Vacancy-Related Recombination Active Defects in as-Grown N-Type Czochralski Silicon

Contact Info

Product

Resources

About