The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

The process of GaN single crystal growth by the Na flux method with Na vapor

“…GaN bulk single crystal substrates are desired for homoepitaxial growth of the device films with low dislocation and defect densities. GaN single crystals can be grown by the Na flux method at temperatures 600-800 1C and N 2 pressures below 10 MPa [1][2][3][4][5][6]. These conditions are relatively manageable compared to those of other methods, for instance, hydride vapor phase epitaxy [7,8], high N 2 pressure solution growth [9][10][11], sublimation growth [12,13], ammonothermal growth [14,15] and melt slow cooling [16].…”

Single crystal growth of GaN using a Ga melt in Na vapor

“…The growth of GaN bulk single crystals has been attempted by various methods, for instance, hydride vapor phase epitaxy [5,6], high N 2 pressure solution growth [7][8][9], sublimation growth [10,11], ammonothermal growth [12,13], flux growth [14][15][16][17][18][19][20][21][22][23][24] and melt slow cooling [25]. We have studied the crystal growth of GaN by the Na flux method [14][15][16][17][18][19][20].…”

Interactions of Dislocations during Epitaxial Growth of SiC and GaN

“…An alternative way to form such facets is solution growth of GaN layers on MOCVD GaN seed layers. By using the Na -fl ux method [33,34] , the high -pressure solution growth method ( HPSG ) [35,36] or the low -pressure solution growth method ( LPSG ) [37 -39] three -dimensional growth islands with side facets are formed in situ during the initial growth stage and a reduction of the dislocation density is observed. Even in a conventional, but optimized MOCVD process such growth conditions can be realized [40] .…”