Interactions of Dislocations during Epitaxial Growth of SiC and GaN

Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

“…Dislocations play an important role in III-V nitride semiconductors [1,2]. However, the methods for counting and determining the dislocation density or identify the types of dislocations are various and the effectiveness or reliability is different among those techniques.…”