The process of GaN single crystal growth by the Na flux method with Na vapor

Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

“…Fig. 8 shows plots of the conversion ratio a vs. time t for the unseeded case of the Na flux method (a) [28] and the seeded case of the HPSG (b) [27]. For the unseeded case of the Na flux method, the two main periods in the plot of the conversion of gallium vs. time shown in Fig.…”

Seeded growth of GaN single crystals from solution at near atmospheric pressure

“…GaN also has been grown at lower temperatures/pressures ($5.0 MPa) by the Na flux method [9]. Addition of Na increases the reactivity and solubility of nitrogen in the Ga and the gaseous nitrogen reacts with the flux/elemental gallium to saturate the solution and deposit crystals.…”

Growth and characterization of millimeter-sized GaN crystals by carbothermal reduction and nitridation of Ga2O3

“…The growth of GaN crystals has been achieved by solution and vapor phase methods. The former method like high N 2 pressure solution growth [4], flux growth [5,6] and ammonothermal growth [7] produces relatively large crystals. The latter method such as the reaction of Ga, GaCl, GaH or Ga(CH 3 ) 3 vapor with NH 3 [8][9][10][11][12][13] forms films and nanometer-and micrometer-sized bulk crystals.…”