The influence of the reverse Early effect on the performance of bandgap references

vanStaveren, A.; Verhoeven, C.J.M.; vanRoermund, A.H.M.

doi:10.1109/81.502214

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…This paper shows that the accuracy can be improved by taking the reverse Early effect into account. The importance of the reverse Early effect for the design of bandgap references has been pointed out in [3]. In this paper, we show its importance for PTAT temperature measurement.…”

mentioning

confidence: 94%

“…For most transistors, the sensitivity is about 2 mV/K. The nonlinearity, or curvature, is represented by the last two terms in (3). This curvature is a problem for accurate absolute temperature measurement, as it can result in a measurement error up to 2 C. This mainly systematic error can be reduced, for instance, by using a temperature dependent collector current which compensates for the temperature dependence of [5].…”

Section: B -Based Temperature Measurementmentioning

confidence: 99%

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Precision Temperature Measurement Using CMOS Substrate PNP Transistors

2004

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Abstract-This paper analyzes the nonidealities of temperature sensors based on substrate pnp transistors and shows how their influence can be minimized. It focuses on temperature measurement using the difference between the base-emitter voltages of a transistor operated at two current densities. This difference is proportional to absolute temperature (PTAT). The effects of series resistance, current-gain variation, high-level injection, and the Early effect on the accuracy of this PTAT voltage are discussed. The results of measurements made on substrate pnp transistors in a standard 0.5-m CMOS process are presented to illustrate the effects of these nonidealities. It is shown that the modeling of the PTAT voltage can be improved by taking the temperature dependency of the effective emission coefficient into account using the reverse Early effect. With this refinement, the temperature can be extracted from the measurement data with an absolute accuracy of 0.1 C in the range of 50 to 130 C.Index Terms-CMOS substrate pnp transistors, effective emission coefficient, proportional to absolute temperature (PTAT) voltage, reverse Early effect, temperature measurement.

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confidence: 94%

Section: B -Based Temperature Measurementmentioning

confidence: 99%

Precision Temperature Measurement Using CMOS Substrate PNP Transistors

2004

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“…Experimental measurements of η and V G0 in diffused wafers and in different types of bipolar transistors as reported elsewhere [7,10] showed a negative correlation between both parameters as reported in the literature. In order to improve V BE (T) description, direct and inverse early effects have been discussed elsewhere [11,12]. Nevertheless, the emitter emission coefficient n(T) and its influence on V BE (T) has not been well studied up to now.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Nagy¹,

Polanco²,

Álvarez³

2011

Active and Passive Electronic Components

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The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potential V DE (T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

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Bandgap references

Structured Electronic Design

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The influence of the reverse Early effect on the performance of bandgap references

Cited by 7 publications

References 6 publications

Precision Temperature Measurement Using CMOS Substrate PNP Transistors

Precision Temperature Measurement Using CMOS Substrate PNP Transistors

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Bandgap references

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