The Influence of Native Oxide Layers of InP on the Shape of Etching Profiles at Resist Edges

Notten, Phl Peter

doi:10.1149/1.2085549

Cited by 22 publications

(13 citation statements)

References 9 publications

(18 reference statements)

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“…Notten observed an analogous anisotropy in profile shape when etching InP in Br2 + HBr. 23 An interpretation for this anisotropy was proposed by Notten, which can be summarized as follows and which we believe may also explain the present results. 8).…”

Section: Discussionsupporting

confidence: 80%

Some Fundamental Aspects of Profile Etching at InP Surfaces

Vermeir

Gomes

Daele

1995

J. Electrochem. Soc.

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Etching profiles at mask edges on (100) InP are obtained in acidic FeC13 containing solutions under uniform illumination and in iodic acid solutions in darkness. For both etching systems, the results of microscopic etching near mask edges are compared to the macroscopic etching behavior of individual crystallographic faces. In the case of photoetching by FeC13, a difference in profile shape is observed between p-and n-type samples, associated with the fact that the photoetching occurs by an electrochemical mechanism. At p-type samples, the slowest etching face [i.e., the (111) face] is revealed whereas at n-type, profiles with very rough bottoms are observed. A tentative interpretation for this phenomenon is proposed. No difference in profile shape is found between p-and n-type in the iodic acid solution, which operates through a chemical mechanism. An anisotrbpic microscopic etching behavior is however observed. A model, in which the presence of a thin oxide layer on the InP plays a crucial role, can explain this etching behavior.

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Section: Discussionsupporting

confidence: 80%

Some Fundamental Aspects of Profile Etching at InP Surfaces

Vermeir

Gomes

Daele

1995

J. Electrochem. Soc.

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“…group-V-terminated planes). The slowest-etching plane is usually {111}A and so these facets are revealed during etching of InP, 35,36 GaAs 34,37,38 and GaP. 31 Due to the differing etch rates of crystal planes, the formation of tetrahedral etch pits (seen as dove-tailed and v-groove voids, respectively, in (011) and (01% 1) cross sections) is observed on the (100) surface of III-V semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Propagation of nanopores during anodic etching of n-InP in KOH

Lynch

Quill

O’Dwyer

et al. 2013

Phys. Chem. Chem. Phys.

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We propose a three-step model of electrochemical nanopore formation in n-InP in KOH that explains how crystallographically oriented etching can occur even though the rate-determining process (hole generation) occurs only at pore tips. The model shows that competition in kinetics between hole diffusion and electrochemical reaction determines the average diffusion distance of holes along the semiconductor surface and this, in turn, determines whether etching is crystallographic. If the kinetics of reaction are slow relative to diffusion, etching can occur at preferred crystallographic sites within a zone in the vicinity of the pore tip, leading to pore propagation in preferential directions. Symmetrical etching of three {111}A faces forming the pore tip causes it to propagate in the (remaining) [111]A direction. As a pore etches, propagating atomic ledges can meet to form sites that can become new pore tips and this enables branching of pores along any of the [111]A directions. The model explains the observed uniform width of pores and its variation with temperature, carrier concentration and electrolyte concentration. It also explains pore wall thickness, and deviations of pore propagation from the [111]A directions. We believe that the model is generally applicable to electrochemical pore formation in III-V semiconductors.

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“…In reality the shape of a wetetched object also depends on the type of mask, because the technology of mask deposition and the type of mask material itself can alter the etching rates of crystallographic planes that intersect the (100) surface. This can come about due to changed properties of the etched material induced by the mask material in close vicinity under the mask [30] or due to the formation of a layer (e.g. oxide) at the interface [31,32].…”

Section: Discussionmentioning

confidence: 99%

Wet-etch bulk micromachining of (100) InP substrates

Eliáš

Kostič

Šoltýs

et al. 2004

J. Micromech. Microeng.

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The study focused on object formation in (100) InP by etching in 3HCl:1H3PO4 through convex and concave square mask patterns of varied orientation and size. Their upper right-hand-side corners were aligned to , and to 15°, 30° and 45° off to . Some -oriented convex squares had - and -oriented corners compensated with rectangular extensions. The concave patterns led to objects with ordinary slow-etching or etch-stop facets along sides in line within and with ordinary and re-entrant facets along sides in line within . The convex patterns (, 15° and 30°) led to objects initially confined by fast-etching facets at corners and slow-etching or etch-stop facets at sides (ordinary between and , and re-entrant between and ). The side facets were eliminated by the progress of the corner ones. They (-oriented patterns) proceeded at rates almost independent of size before the eradication of the side facets, after which they proceeded faster. The -oriented convex patterns led to objects confined only by fast-etching facets. The objects developed at rates that considerably depended on pattern size and etching time. Objects under small patterns developed faster compared to those under large ones. The -oriented corner-compensated patterns led to pyramidal objects confined by facets related to (110), , (101) and .

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The Influence of Native Oxide Layers of InP on the Shape of Etching Profiles at Resist Edges

Cited by 22 publications

References 9 publications

Some Fundamental Aspects of Profile Etching at InP Surfaces

Some Fundamental Aspects of Profile Etching at InP Surfaces

Propagation of nanopores during anodic etching of n-InP in KOH

Wet-etch bulk micromachining of (100) InP substrates

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