The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films

Demichelis, Francesca; Crovini, G.; Pirri, Candido; Tresso, Elena Maria; Galloni, R.; Rizzoli, R.; Summonte, C.; Zignani, F.; Rava, P.; Madan, A.

doi:10.1080/01418639408240116

Cited by 35 publications

(11 citation statements)

References 12 publications

(4 reference statements)

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“…Because of its high thermal stability and high chemical inertness 29 , nonstoichiometric silicon carbide (Si x C 1−x ) is a candidate for a high-damage-threshold material, with a damage threshold that can reach up to 40 TW/cm 2 30 . This material has already been considered for high-temperature and high-power electronics and has a wide variety of optoelectronic applications 31 32 . In particular, Si x C 1−x is a potential saturable absorber for passively mode-locked fiber lasers because of its aforementioned excellent features 30 .…”

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confidence: 99%

Can silicon carbide serve as a saturable absorber for passive mode-locked fiber lasers?

Cheng

Lin

Chen

et al. 2015

Sci Rep

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The study presents a novel demonstration of a passively mode-locked erbium-doped fiber laser (EDFL) that is based on a silicon carbide (SixC1−x) saturable absorber. When the C/Si composition ratio is increased to 1.83, the SixC1−x film transforms from two-photon absorption to nonlinear saturable absorption, and the corresponding value reaches −3.9 × 10−6 cm/W. The Si-rich SixC1−x film cannot mode lock the EDFL because it induced high intracavity loss through two-photon absorption. Even when a stoichiometric SiC is used, the EDFL is mode locked, similar to an EDFL operating under weak nonlinear-polarization-rotation condition. A C-rich SixC1−x film containing sp2-orbital C–C bonds with a linear absorbance of 0.172 and nonlinear absorbance of 0.04 at a 181 MW/cm2 saturation intensity demonstrates nonlinear transmittance. The C-rich SixC1−x saturable absorber successfully generates a short mode-locked EDFL pulse of 470 fs. The fluctuation of the pulse-train envelope dropps considerably from 11.6% to 0.8% when a strong saturable-absorption-induced self-amplitude modulation process occurs in the C-rich SixC1−x film.

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confidence: 99%

Can silicon carbide serve as a saturable absorber for passive mode-locked fiber lasers?

Cheng

Lin

Chen

et al. 2015

Sci Rep

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“…By introducing carbon atoms into Si network to form SiC alloys, the optical band gap can be extended in a wide range [2][3][4]. However, the light emission from a-SiC:H films is usually limited in red-green light range, which can be ascribed to the existence of the methyl groups in the films.…”

Section: Introductionmentioning

confidence: 99%

UV and blue light emission from SiC nanoclusters in annealed amorphous SiC alloys

Mei

Rui

et al. 2006

Journal of Non-Crystalline Solids

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“…Hydrogen dilution has been observed to have high reactivity with hydrogen-containing groups and other weak bonds, effectively acting as an etching mechanism in competition with the deposition of the film. 13,14 Examples of hydrogen dilution can be seen extensively in PECVD grown Si, 14,15 SiC, 13,[16][17][18] SiN, 15,16 as well as other Si alloys. 17 In conjunction with the optimization of other deposition parameters, hydrogen dilution has been observed to decrease the total hydrogen concentration in PECVD grown films, and/or promote higher molecular order with decreased concentrations of defects and voids, and increased atomic density.…”

Section: Introductionmentioning

confidence: 99%

Characterization and versatile applications of low hydrogen content SiOCN grown by plasma-enhanced chemical vapor deposition

Hamm

Waidmann

Mathai

et al. 2014

Journal of Applied Physics

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Low hydrogen content silicon oxycarbonitride (SiOCN) thin films were grown by plasma-enhanced chemical vapor deposition exploiting hydrogen dilution with silane/methane/nitrous oxide or tetramethylsilane/nitrous oxide precursors. The effects of deposition temperature were compared by investigating the compositional, optical, mechanical, and electrical properties of films grown at 100 °C, 250 °C, and 400 °C at thicknesses ranging from 50 nm to 10 μm. The dielectric constant and high breakdown strength of the films remain relatively constant at between 4–5 and 6.8 ± 0.2 MV cm−1 to 9.1 ± 0.3 MV cm−1, respectively, despite the differences in deposition temperature. Other properties of the films include excellent transparency in the visible regime, high nanoindentation hardness (4 to 12 GPa), and relatively low measured stress on Si (−20 to −300 MPa). Overall, the results of this work show that these SiOCN films can be used in a wide variety of applications, including as a dielectric within high voltage capacitors, transparent abrasion-resistant coatings for plastic windows, coatings on flexible substrates, a metal diffusion barrier for low-k dielectrics and polymer films, or within various microelectronic fabrication steps or systems.

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The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films

Cited by 35 publications

References 12 publications

Can silicon carbide serve as a saturable absorber for passive mode-locked fiber lasers?

Can silicon carbide serve as a saturable absorber for passive mode-locked fiber lasers?

UV and blue light emission from SiC nanoclusters in annealed amorphous SiC alloys

Characterization and versatile applications of low hydrogen content SiOCN grown by plasma-enhanced chemical vapor deposition

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