The influence of growth conditions on carrier lifetime in 4H–SiC epilayers

Lilja, Louise; Booker, Ian Don; Ul-Hassan, Jawad; Janzén, Erik; Bergman, J. P.

doi:10.1016/j.jcrysgro.2013.06.037

Cited by 11 publications

(12 citation statements)

References 24 publications

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“…In addition, as the doping concentration and growth rate increase, the Z 1/2 defect concentration ranges between 6.78 × 10 12 cm −3 and 1.41 × 10 13 cm −3 . Lilja et al reported that the Z 1/2 concentration does not show any obvious tendency with epitaxial growth rate, and the concentration of Z 1/2 in different epitaxial wafers is between 1 × 10 13 cm −3 and 4 × 10 13 cm −3 [52]. The above literature results is in agreement with our results.…”

Section: Resultssupporting

confidence: 93%

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Meng

et al. 2020

Micromachines

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In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density of triangular defects (TDs), while no direct correlation between the C/Si ratio and the deep level defect Z1/2 could be confirmed. By adjusting the C/Si ratio, a decrease of several orders of magnitudes in the noise level for the 4H-SiC Schottky barrier diodes (SBDs) could be achieved attributing to the improved epilayer quality with low TD density and low surface roughness. The work should provide a helpful clue for further improving the device performance of both the 4H-SiC SBDs and the Schottky barrier ultraviolet photodetectors fabricated on commercial 4H-SiC wafers.

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Section: Resultssupporting

confidence: 93%

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Meng

et al. 2020

Micromachines

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“…This indicates that the center likely contains a C vacancy, and this was recently confirmed by EPR measurements [186,187]. Careful optimization of the growth conditions including decreasing the growth temperature and increasing the C/Si ratio allowed for epitaxial growth with deep trap densities (Z1/2 and EH6/7) below 5 × 10 12 cm −3 and increase of the carrier lifetime to 2-5 μs [118,120,188]. Further increase of the lifetime with keeping good surface morphology is difficult during the epitaxy.…”

Section: Deep Levelsmentioning

confidence: 69%

Bulk and epitaxial growth of silicon carbide

Kimoto

2016

Progress in Crystal Growth and Characterization of Materials

131

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“…The most pronounced dependence is the decrease in trap density with an increase in the C/Si ratio [61,[116][117][118]. The most pronounced dependence is the decrease in trap density with an increase in the C/Si ratio [61,[116][117][118].…”

Section: Point Defects (Deep Levels)mentioning

confidence: 98%

“…The most pronounced dependence is the decrease in trap density with an increase in the C/Si ratio [61,[116][117][118]. Careful optimization of the growth conditions, including decreasing the growth temperature and increasing the C/Si ratio, allowed for deposition of layers with deep trap concentrations (Z 1/2 and EH 6/7 ) below 10 12 /cm 3 and an increase in the carrier lifetime to 2 ms [45,118,121]. Careful optimization of the growth conditions, including decreasing the growth temperature and increasing the C/Si ratio, allowed for deposition of layers with deep trap concentrations (Z 1/2 and EH 6/7 ) below 10 12 /cm 3 and an increase in the carrier lifetime to 2 ms [45,118,121].…”

Section: Point Defects (Deep Levels)mentioning

confidence: 99%