The influence of film structure on In2O3 gas response

Korotcenkov, Ghenadii; Brînzari, V.; Cerneavschi, A.; Ivanov, Maxim; Golovanov, V.; Cornet, A.; Morante, J.R.; Cabot, Andreu; Arbiol, Jordi

doi:10.1016/j.tsf.2004.02.018

Cited by 161 publications

(96 citation statements)

References 22 publications

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“…The characterization of ITO films is not considered in this paper because already widely investigated in the literature [20][21][22][23][24][25][26][27][28][29]. Samples as thin as 20 nm were grown on amorphous silica substrates at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Cesaria¹,

Caricato²,

Leggieri³

et al. 2011

J. Phys. D: Appl. Phys.

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In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

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Section: Introductionmentioning

confidence: 99%

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Cesaria¹,

Caricato²,

Leggieri³

et al. 2011

J. Phys. D: Appl. Phys.

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“…CO and H 2 ) and a lower response to the ozone. This behavior indicates direct correlation between the gas response and the film stoichiometry [29].Generally, when the conductivity (resistivity) is low (high), the response to the reducing gases is high [28]. According to XRD results (Fig.…”

Section: Resultsmentioning

confidence: 76%

“…It is obvious that the first sample (with the substrate temperature of 450℃) has higher sensitivity to the incoming gas and moreover, increasing the amount of gas leads to a higher response signal. Generally, it is accepted that a more resistive sample with higher roughness is better compared to another due to its better trapping situation for reducing the gases [28][29][30].…”

Section: Resultsmentioning

confidence: 99%

Characterization and Gas-sensing Performance of Spray Pyrolysed In₂O₃Thin Films: Substrate Temperature Effect

Bagheri¹,

Ziabari²,

Rozati³

et al. 2012

Transactions on Electrical and Electronic Materials

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Spray pyrolysis method was applied for the preparation of indium oxide (In 2 O 3 ) thin films, by varying the substrate temperature range from 400-600℃. All the samples were characterized at room temperature by using X-Ray diffraction, Scanning electron microscopy, Atomic Force Microscopy, Hall Effect and UV-Visible spectrophotometry. The optimal substrate temperature required for obtaining films of high crystallographic quality was 575℃. By comparing optical transmittance and electrical conductivity it was observed that the best figure of merit for these films was achieved for the same temperature and electrical resistivity was in the order of ρ=1.47×10 -1 [Ωcm]. Gas sensing measurements of the films in ethanol showed enhancement with surface roughness and sheet resistance.

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“…A straightforward conclusion is the reverse role of thickness on gas sensing properties of the films. It may be better to use thinner films to improve sensing characteristics [3,42].…”

Section: Resultsmentioning

confidence: 99%

Peculiarities of Deposition Times on Gas Sensing Behaviour of Vanadium Oxide Thin Films

2016

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The importance of vanadium oxide in solid state science as a semiconductor encouraged us to prepare and investigate its microstructure and surface properties related to gas sensing characteristics. Hence, vanadium oxide thin films were deposited by spray pyrolysis method. The prepared films were placed in an electric circuit and the sensing characteristics of these films to ethanol vapors were studied. It was possible to find correlations between nanostructure and electrical properties of the obtained thin films and to optimize conditions of its synthesis. By X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy, the structure of the deposited films was determined. Based on atomic force microscopy results, the fractal analysis showed a decreasing trend of the fractal dimension (the slope of the log (perimeter) vs. log (area)) versus the deposition time. It was found that the film growth and gas response were affected by the deposition time. The operating temperature of the sensor was optimized for the best gas response. In accordance with our findings, the film deposited at the lowest deposition time (20 min) had the highest sensing response to ethanol.

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The influence of film structure on In2O3 gas response

Cited by 161 publications

References 22 publications

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Characterization and Gas-sensing Performance of Spray Pyrolysed In₂O₃Thin Films: Substrate Temperature Effect

Peculiarities of Deposition Times on Gas Sensing Behaviour of Vanadium Oxide Thin Films

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The influence of film structure on In2O3 gas response

Cited by 161 publications

References 22 publications

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Characterization and Gas-sensing Performance of Spray Pyrolysed In2O3Thin Films: Substrate Temperature Effect

Peculiarities of Deposition Times on Gas Sensing Behaviour of Vanadium Oxide Thin Films

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Characterization and Gas-sensing Performance of Spray Pyrolysed In₂O₃Thin Films: Substrate Temperature Effect