Characterization and Gas-sensing Performance of Spray Pyrolysed In₂O₃Thin Films: Substrate Temperature Effect

Abstract

Spray pyrolysis method was applied for the preparation of indium oxide (In 2 O 3 ) thin films, by varying the substrate temperature range from 400-600℃. All the samples were characterized at room temperature by using X-Ray diffraction, Scanning electron microscopy, Atomic Force Microscopy, Hall Effect and UV-Visible spectrophotometry. The optimal substrate temperature required for obtaining films of high crystallographic quality was 575℃. By comparing optical transmittance and electrical conductivity it was observed that the best figure of merit for these films was achieved for the same temperature and electrical resistivity was in the order of ρ=1.47×10 -1 [Ωcm]. Gas sensing measurements of the films in ethanol showed enhancement with surface roughness and sheet resistance.

Cost‐effective dye‐sensitized solar cells based on rutile‐phase three‐dimensional TiO2 hierarchical nanostructures

“…The absorption band edge shifted toward longer wavelengths as the temperature increased. Absorption edges were observed at approximately 301, 315, and 325 nm at temperatures of 100°C, 130°C, and 160°C, respectively, with a growth period of 6 h. The red shift is owing to an increase in the size of the nanostructure (Bagheri Khatibani et al, 2012). The absorption edges at approximately 312, 319, and 323 nm exhibited a red shift for a growth time of 12 h. The synthesized 3D nanostructures at a growth time of 18 h exhibited absorption edges at approximately 323, 319, and 312 nm.…”

Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

“…Electrons are collected in the 100-nm-thick aluminum-doped zinc oxide (AZO) layer as AZO is a transparent conducting oxide (TCO). Other commonly used TCOs are tin oxide, indium tin oxide, zinc oxide, and cadmium oxide 56 , 57 . The 80-nm-thick layer of oxygen-deficient zinc oxide (od-ZnO) and the 70-nm-thick layer of cadmium sulfide (CdS) function as n-type semiconductors.…”

“…Other commonly used TCOs are tin oxide, indium tin oxide, zinc oxide, and cadmium oxide. 56,57 The 80-nm-thick layer of oxygen-deficient zinc oxide (od-ZnO) and the 70-nm-thick layer of cadmium sulfide (CdS) function as n-type semiconductors. The photon-absorber layer of p-type CIGS (or CZTSSe) is of thickness L s ≤ 2200 nm, the 20-nm-thick Al 2 O 3 layer is needed for passivation, and the 500-nm-thick Mo layer serves as both the back-contact and an optical reflector.…”