The Importance of Interbands on the Interpretation of the Raman Spectrum of Graphene Oxide

Claramunt, S.; Varea, A.; López‐Díaz, David; Velázquez, M. Mercedes; Cornet, A.; Cirera, A.

doi:10.1021/acs.jpcc.5b01590

Cited by 585 publications

(553 citation statements)

References 51 publications

(129 reference statements)

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“…For the rest of the cooling process (∼75 minutes), only the hydrogen gas was kept active. e introduction of argon during the initial stages (5 minutes at 1000°C) of cooling yields a D peak (∼1300 cm ) of reduced intensity in the Raman characteristics of graphene (Figure 1), which is consistent with reports of graphene with a high degree of disorder [37][38][39].…”

Section: Methodssupporting

confidence: 87%

PMMA-Assisted Plasma Patterning of Graphene

Bobadilla

Ocola

Sumant

et al. 2018

Journal of Nanotechnology

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Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. e present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate-(PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. e exposure time required to produce the ribbon patterns on graphene is 2 minutes. We produce graphene ribbon patterns with ∼50 nm width and integrate them into solid state and liquid gated transistor devices.

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Section: Methodssupporting

confidence: 87%

PMMA-Assisted Plasma Patterning of Graphene

Bobadilla

Ocola

Sumant

et al. 2018

Journal of Nanotechnology

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“…These bands have been reported in recent studies on spectra of carbon black, 40 graphene oxide 41 as well as disordered and amorphous carbon. 24 Some authors suggest that the presence of a D* band may be associated with the formation of sp 2 -sp 3 bonds in disordered carbonaceous materials, 40,41 while D'' band may be related to the presence of amorphous carbon in the prepared samples. 40,42,43 Raman spectrum of CMFe (Figure 3a ) and a broad G band (1587 cm -1 ).…”

Section: Resultssupporting

confidence: 68%

“…However, the I D'' /I G peak ratio, which is associated to amorphous carbon, calculated for the CMFe (I D'' /I G = 0.25), is lower than the ratio obtained for CMNi (I D'' /I G = 0.66) and CMCo (I D'' /I G = 0.32), which indicates that CMFe has a more wellorganized structure. 41 The high value of I D /I G peak ratio is commonly related to a larger number of structural defects and imperfections in carbon materials. I D /I G peak ratios calculated for CMFe, CMNi and CMCo were 1.09, 1.14 and 1.77, respectively.…”

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confidence: 99%

Direct Synthesis of Porous Carbon Materials Prepared from Diethyldithiocarbamate Metal Complexes and Their Electrochemical Behavior

Silva

Porto

Caliman

et al. 2018

J. Braz. Chem. Soc.

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Porous carbon materials were prepared at low temperatures via thermal decomposition of iron, nickel and cobalt N,N-diethyldithiocarbamates (DDT). X-ray diffraction data showed two peaks at 2θ (25.5° and 43.5°) that indicate the presence of graphite-like structures. Raman spectra displayed D and G bands in the range from 1312 to 1321 cm -1 and 1587 to 1593 cm -1 , respectively, which were fitted with 4 components. All spectra showed two low intensity D* (1190 cm ) bands, assigned to sp 2 -sp 3 bonds in disordered carbonaceous materials and amorphous carbon, respectively. Transmission electron microscopy images showed agglomerates of spherical particles formed by graphitic segments. The results showed that the carbon material obtained from iron N, N-diethyldithiocarbamate, Fe(DDT) 3 , is structurally better organized than the others and the pore size distribution curves confirmed that this material presents high degree of mesoporosity. Voltammetric curves obtained using KOH and H 2 SO 4 electrolytes showed hysteresis behavior typical of capacitors charge/discharge process. The carbon material prepared from Fe(DDT) 3 displayed the highest specific capacitance in acidic media, 59 F g -1 , which was associated to its high degree of mesoporosity. Keywords: carbon materials, diethyldithiocarbamate complexes, electrochemical application IntroductionDifferent physical methods have been used to prepare carbon nanomaterials such as laser ablation, 1,2 arch discharge 3,4 and combustion. 5,6 Thermal decomposition of organic and organometallic precursors [7][8][9] has been presented as a viable alternative to physical methods which use harsh synthesis conditions and yield small amount of products. Different carbon-rich precursors are used to obtain these carbon nanostructures, which can be transformed into graphitic carbon materials of different sizes and shapes. Among these organic precursors, alkynes olygoine derivatives are good candidates due to their high chemical instability, which allows them to undergo different chemical reactions. 10 Various carbon precursors such as benzene, 11 sucrose 12 and phenol resin, 13 are also suitable for the synthesis of carbon materials. Similarly, the pyrolysis of organometallic precursors, such as cobalt acetylacetonate, 14 also yields carbon nanostructures presenting good electrochemical performance which depends on surface area as well as the porosity of these structures. The major problem associated with the method described above is the presence of encapsulated metals.Porous carbon materials are excellent candidates for electrodes in supercapacitors. 15,16 For these materials pore accessibility plays a significant role in the charge storage and the specific capacitance reaches a maximum value when the pore size matches the maximum electrolyte ion dimension. 17 For carbon nanomaterials the surface areas range from 300 to 600 m 2 g -1 and are responsible for electrolyte wetting and rapid ionic motions necessary for da Silva et al. 1905 Vol. 29, No. 9, 2018 a satisfactory electroc...

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“…The peak at 1570 cm −1 may be identified with the skeletal vibration of the graphitic domain [37]. The intensity for the 60 W plasma reduced sample shows significant decrease in intensity for the oxygenated functional groups of C-O-C and C-O-H. response originates due to defects or translational disorders whereas the G app band corresponds to scattering from the E 2g mode of the sp 2 graphitic domain superposed with contributions from D′, D+D′, and 2D′ [38][39][40]. The presence of a broad shoulder peak has been observed between D and G app band for the untreated, 20 W and 40 W plasma treated samples which disappears for the 60 W plasma treated sample.…”

Section: Resultsmentioning

confidence: 95%

Effect of plasma power on reduction of printable graphene oxide thin films on flexible substrates

Banerjee

Mahapatra

Pal

et al. 2018

Mater. Res. Express

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Graphene oxide prepared by graphene nanoplatelets and reduced by laser treatment A Longo, R Verucchi, L Aversa et al. AbstractRoom temperature hydrogen plasma treatment on solution processed 300 nm graphene oxide (GO) films on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates has been performed by varying the plasma power between 20 W and 60 W at a constant exposure time of 30 min with a view to examining the effect of plasma power on reduction of GO. X-ray powder diffraction (XRD) and Raman spectroscopic studies show that high energy hydrogen species generated in the plasma assist fast exfoliation of the oxygenated functional groups present in the GO samples. Significant decrease in the optical band gap is observed from 4.1 eV for untreated samples to 0.5 eV for 60 W plasma treated samples. The conductivity of the films treated with 60 W plasma power is estimated to be six orders of magnitude greater than untreated GO films and this enhancement of conductivity on plasma reduction has been interpreted in terms of UV-visible absorption spectra and density functional based first principle computational calculations. Plasma reduction of GO/ITO/ PET structures can be used for efficiently tuning the electrical and optical properties of reduced graphene oxide (rGO) for flexible electronics applications.

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The Importance of Interbands on the Interpretation of the Raman Spectrum of Graphene Oxide

Cited by 585 publications

References 51 publications

PMMA-Assisted Plasma Patterning of Graphene

PMMA-Assisted Plasma Patterning of Graphene

Direct Synthesis of Porous Carbon Materials Prepared from Diethyldithiocarbamate Metal Complexes and Their Electrochemical Behavior

Effect of plasma power on reduction of printable graphene oxide thin films on flexible substrates

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