The Impact of SiGe BiCMOS Technology on Microwave Circuits and Systems

Abstract

This paper focuses on low power and high integration capabilities of SiGe BiCMOS technology and describes the performance improvements which can be obtained by its utilization in mixed-signal microwave circuits and systems. By way of examples, the article highlights the fact that the combination of high-bandwidth, high-gain and low-noise SiGe HBT s with dense CMOS functionality in aSiGe BiCMOS technology enables implementation of powerful single-chip transceiver architectures for multi-GHz and multi-Gb/s communication applications.

Polynomial noise modeling of silicon‐based GaN HEMTs

“…Indeed, new fabrication methods, novel materials, and transistor architectures, which permit aggressive downscaling into the nanometer regime, have been proposed in recent years. Along these lines, FinFET devices or SiGe BiCMOS technologies represent some outstanding examples of the academic and industrial efforts in these fields. However, several issues still need to be solved in the abovementioned technologies for RF applications, as far as power handling, breakdown voltages, or noise performance are concerned.…”

Use of Oxynitride Dielectric to Maximise the Growth Rate of Selective Epitaxial Base Layer in a Self-Aligned Double-Polysilicon SiGe Bipolar Transistors

“…SiGe BiCMOS technology offers high-performance together with high-integration capabilities for low-noise high-speed and low-power wireless and optical communications [2]. The epitaxial growth of the SiGe base layer can be done in a non-selective or a selective way.…”