Design of 200 GHz SiGe HBT's

Abstract

SiGe HBT's with ff200GHz for BVc~o=1.7V and RB=2kR/sq are demonstrated in simulations that include non-local avalanching in the collector and an optimization strategy for the E-B-C profile.

Impact Ionization in Thin Silicon Diodes

“…The ac and dc data are in excellent agreement with each other. These measurements are directly related to of aggressively scaled bipolar collector junctions, such as those proposed in [7]. In bipolar transistors, however, the electron current initiating impact ionization is generated by the emitter-base junction, while in our case it is generated by the incident light.…”

A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD

“…As a result of the natural fit into the BiCMOS technology roadmaps, today more than 10 BiCMOS SiGe technologies have been introduced in over three technology generations in manufacturing environments in less than a few years [26]. In this time frame, the speed of the SiGe HBT device has accelerated from 50 to 300 GHz frequencies (with circuit performance demonstrated over 100 GHz), rapidly opening new doors for future un-anticipated applications [27][28][29][30].…”

Vertical profile optimisation of a self-aligned SiGeC HBT process with an n-cap emitter

“…A maximum of f/p--135GHz is obsened at t2$Fr =3nm. These results suggest that additional charge storage decreases theyFP in a thick SiGe spacer layer[7]. If.…”