Polynomial noise modeling of silicon‐based GaN HEMTs

Abstract

In the framework of silicon (Si) technology, evolution towards high-frequency analog applicationswhich involves innovative solutions such as SiGe BiCMOS and FinFET deviceswide bandgap semiconductors grown on Si substrates are likely to represent a valid option in those cases wherever high-power handling and low noise figures are required. Although such active devices have been extensively investigated in the last years, much of interest has been devoted in developing nonlinear models for high-power applications, whereas reliable noise models still lack, in particular, the validity of traditional (i.e. equivalent temperature-based) approaches for noise modeling of wide bandgap devices has not been sufficiently probed yet.In this contribution, a quite general, black box noise model of active devices is proposed and applied to a family of gallium nitride-on-Si high-electron-mobility transistors fabricated by Selex ES. The model is based on a polynomial approximation of the device correlation matrix and does not require that an accurate small-signal equivalent circuit is available; instead, it can be extracted from multifrequency source pull data. Experimental results demonstrate that a typical behavior of the noise parameters is obtained, both versus frequency and gate periphery.

GaN HEMT Noise Model Based on Electromagnetic Simulations

“…3(g) is (7) where the skin effect is taken into account with (8) Analogously to (2), and can be extracted by a linear regression of the real part of on the FW-EM simulation data of region (III), (9) while can be determined by mean (10) where the mean value is calculated over the whole frequency range.…”

Guest editorial for the special issue on noise modeling of high‐frequency semiconductor devices

“…This link often is established via modeling and simulation (M&S), which enables the prediction of device performance in real-world circuits operating under tight accuracy constraints. M&S often allows for a characterization of the worst-case performance of noiseimpacted circuits without the need to account for excessively conservative safety margins or engage in costly iterative design approaches [15][16][17][18][19][20][21][22].The goal of this special issue is to assemble recent results and up-to-date surveys addressing the topic of modeling, simulation, and characterization of noise processes in advanced GaAs, GaN, Si, and SiGe devices, ranging from the low-frequency regime to millimeter wave frequencies. A total of 14 refereed papers (including this editorial) comprising 4 invited and 10 contributed papers are included in this special issue:…”

“…This link often is established via modeling and simulation (M&S), which enables the prediction of device performance in real-world circuits operating under tight accuracy constraints. M&S often allows for a characterization of the worst-case performance of noiseimpacted circuits without the need to account for excessively conservative safety margins or engage in costly iterative design approaches [15][16][17][18][19][20][21][22].…”

Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

“…Many noise models have been reported in the literature: the wellknown Fukui's model [6], the equivalent noise temperature model by Pospieszalski [7] and the flicker noise model for HEMTs [8]. Many approaches on HEMT's noise parameters characterization ware investigated [9][10][11].…”

“…Many noise models have been reported in the literature: the wellknown Fukui's model [6], the equivalent noise temperature model by Pospieszalski [7] and the flicker noise model for HEMTs [8]. Many approaches on HEMT's noise parameters characterization ware investigated [9][10][11].In 1974, R.A. Pucel proposed a charge control based approach for a noise model in FET devices, the model is known as the PRC noise model [12]. Later in 1988, the model was used for HEMT devices in [13] and later improved by Zhi [14] where they included, in the PRC model, the temperature coefficients in order to calculate precise noise parameters for HEMTs.…”