GaN HEMT Noise Model Based on Electromagnetic Simulations

Nalli, Andrea; Raffo, Antonio; Crupi, Giovanni; D'Angelo, Sara; Resca, Davide; Scappaviva, Francesco; Salvo, Giuseppe; Caddemi, Alina; Vannini, G.

doi:10.1109/tmtt.2015.2447542

Cited by 69 publications

(63 citation statements)

References 20 publications

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“…The first step is de-embedding of the transistor intrinsic noise parameters from the noise parameters of the whole device. For that purpose, each of three developed extraction methods uses different noise deembedding procedure [19][20][21][22][23], and all the used de-embedding procedures will be explained bellow. The second step is the same in all three cases and represents determination of the noise wave temperatures from the de-embedded intrinsic noise parameters using the Eqs.…”

Section: Cad Procedures For Extraction Of the Noise Wave Temperaturesmentioning

confidence: 99%

“…Analytical noise de-embedding procedure [19][20][21] is similar to the analytical smallsignal de-embedding procedure and provides determination of the transistor intrinsic noise parameters based on the noise parameters of entire device by removing the influence of the extrinsic circuit elements to the transistor noise. Namely, the main concept is to eliminate the noise influence of the extrinsic elements connected in cascade, series and parallel using ABCD, Z and Y representations, respectively.…”

Section: Analytical Noise De-embedding Proceduresmentioning

confidence: 99%

“…Hence, it would be useful to develop certain extraction procedures that would provide more efficient determination of these temperatures. Moreover, because in the case of noise wave model there are closed form expressions relating the noise wave temperatures and the noise parameters of transistor intrinsic circuit [2], the optimization procedures can be avoided by applying the de-embedding procedures to determine the intrinsic noise parameters from the measured transistor noise parameters [19][20][21][22][23], and further calculation of the noise wave temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…The presented methods provide de-embedding of the noise parameters of transistor intrinsic circuit from the measured transistor noise parameters and further straightforward extraction of the transistor noise wave temperatures. All of these extraction methods are based on different noise de-embedding procedures: analytical procedure, procedure within a microwave circuit simulator and procedure using artificial neural networks (ANNs) [19][20][21][22][23]. In order to determine which of these extraction methods is the most suitable for the transistor noise modeling, they are applied to a specific GaAs HEMT component, and the obtained results are used for the comparative analysis of the presented extraction procedures.…”

Section: Introductionmentioning

confidence: 99%

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Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

2017

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Section: Cad Procedures For Extraction Of the Noise Wave Temperaturesmentioning

confidence: 99%

Section: Analytical Noise De-embedding Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

2017

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“…However, the frequency band of model cannot reach up to millimeter wave in most cases. [8][9][10][11][12] Under this circumstance, many noise characteristics in high frequency band especially in millimeter wave can't be investigated.Apart from the modeling technique itself, several novel characteristics especially the gate leakage current effect and the electro-thermal characteristics in noise performance have drawn lots of attention. The gate leakage current is one of the hot topics as a result of its great effect on output characteristics of transistors.…”

mentioning

confidence: 99%

High Frequency Noise Model of AlGaN/GaN HEMTs

Mao

et al. 2017

ECS J. Solid State Sci. Technol.

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Compared with conventional GaAs HEMTs, the larger gate leakage current and more obviously self-heating effects are two unique macroscopic features in AlGaN/GaN HEMTs. This paper presents the study of the effects brought by temperature-dependent R s and R d on noise performance of AlGaN/GaN HEMT. Based on these studies, a noise model up to 35GHz is established. An improved PRC model is proposed and the noise parameters NF min , R n and opt in the frequency band ranging from 0.1GHz to 35GHz is investigated. The effects brought by gate leakage current have been taken into consideration. Then, noise performance under different ambient temperature has been studied based on the high frequency noise model mentioned above. The parameters in the model except the parasitic inductors and capacitors are all temperature-dependent. With the model, the effects brought by temperature-dependent R s and R d have been studied under four different temperatures by comparing the noise performance in two different conditions. Results show that the temperature-dependent characteristics of these two parasitic resistances will have an effect on NF min and R n while little effect on opt . © The Author Nowadays, the wide bandgap semiconductor device-AlGaN/GaN high electron mobility transistors (HEMTs) have become popular in radar and wireless communication applications. Their advantages including higher output power, efficiency and operating frequency over other devices and their ability in terms of operating in extreme environment have drawn lots of attentions.1 Besides, they are also excellent candidates for the design of low noise amplifier in the perspective of low noise amplifier-power amplifier (LNA-PA). Recently, low noise amplifier based on AlGaN/GaN HEMTs which can provide 18.22dB gain at 2.6GHz while the noise figure is only 0.34dB has been reported.2 Also, LNA design in millimeter wave frequency band will become a focus issue in the age of 5G communication. 3Normal LNA design is based on massive noise measurement which will induce a lot of cost and longer design period. Under this situation, it's essential to establish noise models to reduce the cost and enhance the efficiency of LNA design. Several work has been done in the past few decades revolving around noise modeling. Besides the conventional noise model such as Pucel's model, 4 Pospieszalski model 5 and Fukui model, 6 many other novel modeling techniques including physical base noise models 7 have sprung up. However, the frequency band of model cannot reach up to millimeter wave in most cases. [8][9][10][11][12] Under this circumstance, many noise characteristics in high frequency band especially in millimeter wave can't be investigated.Apart from the modeling technique itself, several novel characteristics especially the gate leakage current effect and the electro-thermal characteristics in noise performance have drawn lots of attention. The gate leakage current is one of the hot topics as a result of its great effect on output characteristics of transistors. 13 In Ref. ...

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Empowering GaN HEMT models: The gateway for power amplifier design

Crupi

Vadalà

Colantonio

et al. 2015

Int J Numerical Modelling

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The purpose of this invited paper is to give readers a comprehensive and critical overview on how to extract equivalent-circuit models for GaN HEMTs, which are the preferred devices for high-power high-frequency applications. This overview is meant to provide a practical modeling know-how for this advanced type of transistor, in order to support its development for improving device technology and circuit design. With the aim to broaden knowledge to empower models, experimental results are presented as illustrative examples of the most crucial challenges faced by the microwave engineers in modeling high-power GaN HEMTs. All the relevant aspects are covered, going from linear (also noise) to nonlinear models. The analysis is mainly focused on the modeling of distinctive peculiarities of GaN HEMTs. Particular attention is paid to study the importance of accurately modeling the kink effect in the output reflection coefficient, because of the relatively high transconductance, the peak in the magnitude of the short circuit current-gain, because of the relatively large intrinsic capacitances, and the low-frequency dispersion, because of trapping and thermal effects. Furthermore, to emphasize the key role of accurate device models for a successful circuit design, a practical example of power amplifier is discussed. Copyright © 2015 John Wiley & Sons, Ltd

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GaN HEMT Noise Model Based on Electromagnetic Simulations

Cited by 69 publications

References 20 publications

Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

High Frequency Noise Model of AlGaN/GaN HEMTs

Empowering GaN HEMT models: The gateway for power amplifier design

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