The impact of parallel GaN HEMTs on efficiency of a 12-to-1 V buck converter

Jenkins, Luke L.; Wilson, Christopher G.; Moses, Justin D.; Aggas, Jeffrey M.; Rhea, Benjamin K.; Dean, Robert N.

doi:10.1109/wipda.2013.6695596

Cited by 12 publications

(6 citation statements)

References 3 publications

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“…GaN-based power electronics feature both low on-resistance and fast switching, leading to substantial reductions in conduction and switching losses, respectively [5]- [10]. The first generation of GaN transistors has been the high electron mobility transistors (GaN HEMTs) that have demonstrated an excellent trade-off between R on and V br [11]- [13].…”

Section: Introductionmentioning

confidence: 99%

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

Jaiswal

Ramakrishnan

2023

IEEE Access

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This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two parallel gates, and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and source. Technology computer-aided design (TCAD) simulator was used in the design process to achieve a specific on-resistance as low as 0.79 mΩ.cm 2 for the device, which has the capacity of blocking voltages up to 600 V. The peak electric field of the PSGT-MOSFET could well be lowered to 2.95 MV/cm, which is about 17% lower than that of a conventional trench gate MOSFET (TG-MOSFET) near the trench corner with help of suitable design and optimization of trench depth, drift doping, and field plate thickness. The TCAD simulation shows that the higher drift doping on the device performance of PSGT-MOSFET produces ∼2× lower switching losses when compared with a similarly rated conventional TG-MOSFET device.INDEX TERMS Vertical GaN, trench MOSFET, split gate, on-resistance, switching loss, TCAD.

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Section: Introductionmentioning

confidence: 99%

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

Jaiswal

Ramakrishnan

2023

IEEE Access

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“…GaN HEMT devices have excellent electrical and physical properties and huge market potential [16,17]. It has been widely concerned and has been applied in many fields, including DC/AC GaN HEMT-based inverters [18,19], AC/DC GaN HEMT-based PFC circuits [20,21], and DC/DC GaN HEMT-based converters [22][23][24], etc.…”

Section: Introductionmentioning

confidence: 99%

Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application

Wang

Zheng

et al. 2022

Energies

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With the increase in renewable energy generation, microgrid has put forward higher requirements on the power density and performance of the photovoltaic inverter. In this paper, the dynamic process of inverter based on the cascode Gallium nitride (GaN) high electron mobility transistor (HEMT) for the photovoltaic (PV) application is analyzed in detail. The parasitic inductors and capacitors have been considered in our proposed equivalent model, which can explain the phenomenon that the crossover time of the voltage and current is prolonged by the parasitic parameters. The influence of the parasitic parameters is identified through theoretical analysis. By analyzing the influence of parasitic parameters, the design process of high-frequency inverter can be optimized. A 500 W inverter based on the cascode GaN HEMT is built, and the correctness of theoretical and simulation analysis is verified by the experimental results.

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“…There are two main challenges in paralleled high-speed WBG, the potential uneven circuit layout and the imbalance of the devices [13]- [15]. On the one hand, the current sharing characteristics of paralleled GaN HEMTs are greatly influenced by R ds_on and V th [16].…”

Section: Introductionmentioning

confidence: 99%

Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

Wang

2019

IEEE Access

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Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs will increase the power handling capability and the efficiency of the converter. The parasitic parameters of both driving and power loop layout are critical which need to be equalized and minimized in GaN HEMT parallel operation. The parameters mismatch of the parallel branch will lead to significant effect on the dynamic characteristics and bring thermal problem of the GaN HEMTs. This paper focuses on the design of paralleled low-voltage enhancement GaN HEMT, and evaluates the effect of the parasitic inductances in both driver and power loops. The LT-spice and ANASYS Q3D Extractor simulation are carried out to analysis the effect of the unbalance parameters. The design guidelines for driver and PCB design are summarized as well. Finally, a 300W isolated DC-DC converter is built to verify the analysis and simulation on parallel operation. INDEX TERMS Solar energy, parasitic parameters, paralleling, enhancement, DC-DC converter, driver design, low-voltage GaN HEMT.

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The impact of parallel GaN HEMTs on efficiency of a 12-to-1 V buck converter

Cited by 12 publications

References 3 publications

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application

Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

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