Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

Li, Jianguo; Wang, Jiuhe

doi:10.1109/access.2019.2957190

Cited by 13 publications

(3 citation statements)

References 25 publications

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“…With the layout design [10], we enter the core of the PCB design flow, since, in this phase, the actual design of the printed circuit is defined, which can be very complex and made up of many layers.…”

Section: Pcb Design Workflowmentioning

confidence: 99%

A Comparative Analysis of Computer-Aided Design Tools for Complex Power Electronics Systems

et al. 2021

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Companies working on semiconductors must currently assure the customers of not only the performance of the semiconductor device per se, but also its performance when it is implemented in a real board, therefore including the role of parasitic effects. It is therefore very important to evaluate, especially during the design phase, not only the single device, but the complete board and their mutual interactions. This consideration opens a new area of investigation in the field of electronic systems engineering. In the current literature, the problem of a software evaluation of parasitic dynamics and electromagnetic effects on printed boards is addressed from the point of view of researchers. Moreover, it is fundamental to have a complete view of the various tools that could be usefully adopted from the perspective of manufacturers. This is the main motivation of this technical note, which performs a comparative analysis of the most prominent software tools for printed circuit boards’ (PCBs) simulation. The main features, the key aspects, and the limitations of the software packages are analyzed in terms of the industrial design of power electronics devices, in order to ensure efficiency and fastness in the semiconductor market.

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Section: Pcb Design Workflowmentioning

confidence: 99%

A Comparative Analysis of Computer-Aided Design Tools for Complex Power Electronics Systems

et al. 2021

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“…The emergence of the wide-bandgap device has changed the existing structure of the semiconductor industry and opened a new situation for the semiconductor industry [11,12]. Wide bandgap semiconductors have become ideal substitutes for power converters [13][14][15]. GaN HEMT devices have excellent electrical and physical properties and huge market potential [16,17].…”

Section: Introductionmentioning

confidence: 99%

Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application

Wang

Zheng

et al. 2022

Energies

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With the increase in renewable energy generation, microgrid has put forward higher requirements on the power density and performance of the photovoltaic inverter. In this paper, the dynamic process of inverter based on the cascode Gallium nitride (GaN) high electron mobility transistor (HEMT) for the photovoltaic (PV) application is analyzed in detail. The parasitic inductors and capacitors have been considered in our proposed equivalent model, which can explain the phenomenon that the crossover time of the voltage and current is prolonged by the parasitic parameters. The influence of the parasitic parameters is identified through theoretical analysis. By analyzing the influence of parasitic parameters, the design process of high-frequency inverter can be optimized. A 500 W inverter based on the cascode GaN HEMT is built, and the correctness of theoretical and simulation analysis is verified by the experimental results.

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“…In this context, several approaches have been followed in the past, including the use of resonant drivers for efficient high-frequency operation [20] and IC gate driver solutions [21]. However, most of these are focused on HEMT devices [22] and do not focus on providing accurate voltage/current control.…”

Section: Introductionmentioning

confidence: 99%

Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion

et al. 2021

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New semiconductor technology is enabling the design of more reliable and high-performance power converters. In particular, wide bandgap (WBG) silicon carbide (SiC) and gallium nitride (GaN) technologies provide faster switching times, higher operating temperature, and higher blocking voltage. Recently, high-voltage GaN devices have opened the design window to new applications with high performance and cost-effective implementation. However, one of the main drawbacks is that these devices require accurate base current control to ensure safe and efficient operation. As a consequence, the base drive circuit becomes more complex and the final efficiency is decreased. This paper presents an improved gate driver circuit for GaN devices based on the use of a constant current regulator (CCR). The proposed circuit achieves constant current regardless of the operating conditions, solving variations with temperature, aging and operating conditions that may degrade the converter performance. Besides, the proposed circuit is reliable and cost-effective, being applicable to a wide range of commercial, industrial and automotive applications. In this paper, its application to a zero-voltage switching resonant inverter for domestic induction heating was performed to prove the feasibility of this concept.

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Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

Cited by 13 publications

References 25 publications

A Comparative Analysis of Computer-Aided Design Tools for Complex Power Electronics Systems

A Comparative Analysis of Computer-Aided Design Tools for Complex Power Electronics Systems

Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application

Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion

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