The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers

Keizer, J. G.; McKibbin, Sarah R.; Simmons, M. Y.

doi:10.1021/acsnano.5b01638

Cited by 23 publications

(29 citation statements)

References 22 publications

(38 reference statements)

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“…As a result, it is often difficult to ensure that the last charge transition measured in the device indeed corresponds to a single electron occupation. Also, there are uncertainties in donor locations up to 1 nm resulting from donor incorporation mechanism, donor diffusion and segregation within the dot and in the leads 17 . All these effects produce a wide band of charging energies as shown in Ref 6 , making the extraction of electron and donor numbers difficult.…”

Section: Introductionmentioning

confidence: 99%

Characterizing Si:P quantum dot qubits with spin resonance techniques

Wang

Chen

Klimeck

et al. 2016

Sci Rep

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Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunability, and are readily available few-electron systems. To be utilized as quantum bits, it is important to non-invasively characterise these donor quantum dots post fabrication and extract the number of bound electron and nuclear spins as well as their locations. Here, we propose a metrology technique based on electron spin resonance (ESR) measurements with the on-chip circuitry already needed for qubit manipulation to obtain atomic scale information about donor quantum dots and their spin configurations. Using atomistic tight-binding technique and Hartree self-consistent field approximation, we show that the ESR transition frequencies are directly related to the number of donors, electrons, and their locations through the electron-nuclear hyperfine interaction.

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Section: Introductionmentioning

confidence: 99%

Characterizing Si:P quantum dot qubits with spin resonance techniques

Wang

Chen

Klimeck

et al. 2016

Sci Rep

Self Cite

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“…In addition, being nondestructive, it can be implemented within the same scanning probe instrument used to pattern the devices, which allows in situ and iterative control during the entire lithography/molecular beam epitaxy (MBE) process for atomic-scale deterministic doping. This ability will be especially useful to speed up the current development of 3D patterned device structures ( 47 ) and significantly aid in the interpretation of their electrical transport behavior. One of the several exciting applications that could emerge from our research is the use of SMM as a diagnostic for the development of a surface code quantum computer (SCQC) ( 2 , 3 ).…”

Section: Discussionmentioning

confidence: 99%

Nondestructive imaging of atomically thin nanostructures buried in silicon

et al. 2017

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“…A sheet density of 5 × 10 11 cm −2 P donors is overgrown epitaxially by ∼2.5 nm (4.75a 0 , where a 0 is Si lattice constant) of Si. The first nm is a lock-in layer grown at room temperature 18 and growth parameters, like temperature and fluxes, were chosen to achieve minimal segregation and diffusion. Consequently the depth of P donors is controlled.…”

Section: S1 Experimental Proceduresmentioning

confidence: 99%

Spatial metrology of dopants in silicon with exact lattice site precision

Usman¹,

Bocquel²,

Salfi³

et al. 2016

Nature Nanotech

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The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub-surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of subsurface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications.As we approach the ultimate regime of Feynman's vision 1 of nanotechnology based on atom-by-atom fabrication 2-5 , there is a critical need to match advances in miniaturisation with atomically precise metrology. In conventional CMOS 6 and tunnelling field effect 7,8 transistors the key relationship between doping profile and performance is now dominated by the positions of just a few dopant atoms, and currently cannot be quantitatively determined. Beyond conventional nanoelectronic devices, in quantum processors based on phosphorus dopants in silicon 9 the precise locations of the individual dopants is critical to the design and operation of spin-based quantum logic gates. Previous studies on locating subsurface dopant positions in semiconductors either provide donor depths based on statistical evidence 10 , or only qualitatively locate dopants within a few nanometers region (of the order of 2.5 nm or more)11 . The key metrological challenge in all of the ultra-scaled applications is the ability to determine the position of dopant atoms in the silicon crystal substrate with lattice-site precision, which will drastically transform our understanding at the most fundamental scale leading to devices with optimised functionalities.In this work, we present an atomically precise metrology and demonstrate the pinpointing of the position of subsurface phosphorous (P) and arsenic (As) dopants in si...

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The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers

Cited by 23 publications

References 22 publications

Characterizing Si:P quantum dot qubits with spin resonance techniques

Characterizing Si:P quantum dot qubits with spin resonance techniques

Nondestructive imaging of atomically thin nanostructures buried in silicon

Spatial metrology of dopants in silicon with exact lattice site precision

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