Nondestructive imaging of atomically thin nanostructures buried in silicon

Gramse, Georg; Kölker, Alexander; Lim, Tingbin; Stock, Taylor J. Z.; Solanki, Hari S.; Schofield, Steven R.; Brinciotti, Enrico; Aeppli, G.; Kienberger, Ferry; Curson, Neil J.

doi:10.1126/sciadv.1602586

Cited by 65 publications

(58 citation statements)

References 49 publications

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“…Furthermore, scanning probe and electron microscopy techniques are exclusively surfacesensitive and thus cannot probe bulk or dilute samples. The properties of samples buried even a few nanometers below the surface can only be probed using advanced nanotomography variants (30,31).…”

mentioning

confidence: 99%

Atomic fluctuations in electronic materials revealed by dephasing

Palato

Seiler

Nijjar

et al. 2020

Proc. Natl. Acad. Sci. U.S.A.

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The microscopic origin and timescale of the fluctuations of the energies of electronic states has a significant impact on the properties of interest of electronic materials, with implication in fields ranging from photovoltaic devices to quantum information processing. Spectroscopic investigations of coherent dynamics provide a direct measurement of electronic fluctuations. Modern multidimensional spectroscopy techniques allow the mapping of coherent processes along multiple time or frequency axes and thus allow unprecedented discrimination between different sources of electronic dephasing. Exploiting modern abilities in coherence mapping in both amplitude and phase, we unravel dissipative processes of electronic coherences in the model system of CdSe quantum dots (QDs). The method allows the assignment of the nature of the observed coherence as vibrational or electronic. The expected coherence maps are obtained for the coherent longitudinal optical (LO) phonon, which serves as an internal standard and confirms the sensitivity of the technique. Fast dephasing is observed between the first two exciton states, despite their shared electron state and common environment. This result is contrary to predictions of the standard effective mass model for these materials, in which the exciton levels are strongly correlated through a common size dependence. In contrast, the experiment is in agreement with ab initio molecular dynamics of a single QD. Electronic dephasing in these materials is thus dominated by the realistic electronic structure arising from fluctuations at the atomic level rather than static size distribution. The analysis of electronic dephasing thereby uniquely enables the study of electronic fluctuations in complex materials.

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mentioning

confidence: 99%

Atomic fluctuations in electronic materials revealed by dephasing

Palato

Seiler

Nijjar

et al. 2020

Proc. Natl. Acad. Sci. U.S.A.

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“…On the other hand, in scanning microwave microscopy an electromagnetic wave (in the microwave range) is transmitted by the AFM cantilever and the reflected signal is also collected by the cantilever and analyzed through a vector network analyzer to deduce the power ratio of the incident and reflected waves . This technique has been shown to resolve not only the lateral location of a buried (14 nm deep) thin layer (0.2 nm thick) of phosphorus in Si, but also its vertical depth . In ultrasonic force microscopy (UFM), ultrasonic vibration of the sample stage at a frequency much higher than the AFM cantilever resonant frequency periodically modulates the indentation depth of the contact‐mode AFM tip into the sample.…”

Section: Characterizing Surfaces and Interfacesmentioning

confidence: 99%

Interface Characterization and Control of 2D Materials and Heterostructures

2018

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2D materials and heterostructures have attracted significant attention for a variety of nanoelectronic and optoelectronic applications. At the atomically thin limit, the material characteristics and functionalities are dominated by surface chemistry and interface coupling. Therefore, methods for comprehensively characterizing and precisely controlling surfaces and interfaces are required to realize the full technological potential of 2D materials. Here, the surface and interface properties that govern the performance of 2D materials are introduced. Then the experimental approaches that resolve surface and interface phenomena down to the atomic scale, as well as strategies that allow tuning and optimization of interfacial interactions in van der Waals heterostructures, are systematically reviewed. Finally, a future outlook that delineates the remaining challenges and opportunities for 2D material interface characterization and control is presented.

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“…As a result, only a handful of groups in the world have successfully made devices with this technique [3,9,14,15], and despite efforts directed at simplifying some parts of the process [16,17] its current application potential remains somewhat limited.…”

Section: Introductionmentioning

confidence: 99%

CMOS platform for atomic-scale device fabrication

Škereň¹,

Pascher²,

Garnier³

et al. 2018

Nanotechnology

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Controlled atomic scale fabrication based on scanning probe patterning or surface assembly typically involves a complex process flow, stringent requirements for an ultra-high vacuum environment, long fabrication times and, consequently, limited throughput and device yield. We demonstrate a device platform that overcomes these limitations by integrating scanning-probe based dopant device fabrication with a CMOS-compatible process flow. Silicon on insulator substrates are used featuring a reconstructed Si(001):H surface that is protected by a capping chip and has pre-implanted contacts ready for scanning tunneling microscope (STM) patterning. Processing in ultra-high vacuum is thereby reduced to a few critical steps. Subsequent reintegration of the samples into the CMOS process flow opens the door to successful application of STM fabricated dopant devices in more complex device architectures. Full functionality of this approach is demonstrated with magnetotransport measurements on degenerately doped STM patterned Si:P nanowires up to room temperature.

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Nondestructive imaging of atomically thin nanostructures buried in silicon

Abstract: Microwave microscopy enables three-dimensional characterization of atomically thin semiconductor structures with nanometer precision.

Cited by 65 publications

References 49 publications

Atomic fluctuations in electronic materials revealed by dephasing

Atomic fluctuations in electronic materials revealed by dephasing

Interface Characterization and Control of 2D Materials and Heterostructures

CMOS platform for atomic-scale device fabrication

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