“…Intensive efforts have been devoted to thermal management including the recent development of new semiconductor materials with ultrahigh thermal conductivity, such as cubic boron phosphide (~500 W/mK) [8] and boron arsenide (~ 1300 W/mK) [7,13,14] . In parallel to heat transfer in homogenous materials, heat dissipation in high power devices can also be severely limited by the near-junction thermal resistance across heterogeneous interfaces, i.e., the thermal boundary resistance (TBR) [1,2,4,12,15] . On the other hand, thermal isolation applications, such as jet engine turbines require interfaces with large TBR and high temperature stability [16] .…”