The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K

Комаров, В. А.; Грабов, В. М.; Suslov, A. V.; Kablukova, N. S.; Suslov, M. V.

doi:10.1134/s1063782619050105

Cited by 7 publications

(6 citation statements)

References 10 publications

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“…In thin semimetal films, the mobility of charge carriers is largely determined by the action of the classical size effect. As shown in (Komarov et al 2019), the thickness of the film reduces the electron mobility to a greater extent than the mobility of the holes, and the block sizes reduce the mobility of the holes more strongly. This leads to a change in the ratio of the mobility of electrons and holes in films of different thicknesses and with different block sizes.…”

Section: Discussionmentioning

confidence: 94%

“…The film deposition modes ensure the obtaining of large-block films on a mica substrate (the block sizes are much larger than the film thickness). Producing films with uniform block sizes is important, since it was shown that block size significantly affects the transport properties of charge carriers in semimetal films (Komarov et al 2019).…”

Section: Experimental Methodsmentioning

confidence: 99%

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Effect of a transverse electric field on the resistance of thin films of the Bi1 – xSbx (x = 0–0.12) system on mica

Грабов¹,

Комаров²,

Pozdnyakov³

et al. 2023

PCS

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The paper is devoted to the study of transverse electric field effect on transport properties of charge carriers in bismuth and bismuth-antimony thin films. Experimental results reveal the existence of electric field effect in thin films of composition up to 12 at.% Sb. The dependencies of resistance on magnitude of electric field are obtained in a wide range of film thicknesses. A qualitative interpretation of the observed effect is given based on the analysis of the mobility of electrons and holes in films depending on the sign of the electric field and the film thickness.

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Section: Discussionmentioning

confidence: 94%

Section: Experimental Methodsmentioning

confidence: 99%

Effect of a transverse electric field on the resistance of thin films of the Bi1 – xSbx (x = 0–0.12) system on mica

Грабов¹,

Комаров²,

Pozdnyakov³

et al. 2023

PCS

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“…The surface of silicon substrate was oxidized (the thickness of oxide layer was approximately 1 um). It is shown that the size of bismuth film crystallites can significantly affect the transport properties of charge carriers (Komarov et al 2019). Thus, oxidizing is crucial because it makes it possible to obtain the similar crystal structure of bismuth films on glass and silicon substrates.…”

Section: Experimental Methodsmentioning

confidence: 99%

Resistivity of thin bismuth films under in-plane tensile strain

Suslov¹,

Gerega²,

Glebov³

et al. 2023

PCS

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The unique properties of bismuth and bismuth-antimony have attracted extensive attention in scope of strain engineering and straintronics in 2D materials in the past few decades. In this work we tested the technique of measurement of electric properties of bismuth films on glass and silicon substrates deformed by dome bending method. The obtained results show fine agreement with the investigation of films deformed by others techniques and can be used to model in-plane tensile deformation. Considering the use of two substrates of silicon and borosilicate glass, the method makes it possible to obtain continuously changed deformation of film in range up to 0.8 % of relative change of area at room temperature.

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“…Результаты измерений удельного сопротивленияρ 11 , относительного поперечного магнетосопротивления -ρ 11,33 , коэффициента Холла -R 12,3 и коэффициента дифференциальной термоЭДС -α 11 по 14 температурным точкам в температурном интервале 77−300 K были обработаны и построены в программе Origin 2018 [12].…”

Section: результаты и их обсуждениеunclassified

“…Для детального анализа поведения коэффициента Зеебека с температурой необходимо учитывать вклады парциальных составляющих термоЭДС электронов и дырок ввиду изменения знака дифференциальной термоЭДС [12].…”

Section: результаты и их обсуждениеunclassified

Galvanomagnetic and Thermoelectric Properties of Bismuth Films Doped with Tin

Matveev¹

2022

Известия АлтГУ

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This paper presents the experimental study of the galvanomagnetic and thermoelectric properties of thin bismuth films doped with tin. The amount of tin is 0.06 at. % with the thickness ranged within 250-800 nm, and it is deposited on mica-muscovite substrates in vacuum up to 1·10-5 mm Hg. The galvanomagnetic and thermoelectric coefficients of all presented films are measured in the temperature range of 77-300 K in a magnetic field of up to 0.65 T. It is found that the classical size effect in the films occurs due to mobility of electrons being restricted by the thickness of the film. A characteristic maximum of temperature dependence of relative transverse magnetoresistance in the temperature range of 150-200 K is observed. A change in the sign of the Seebeck coefficient at the temperature of 175 K is found. It can be explained by the temperature change ratio of the electron and hole components contributions to galvanomagnetic and thermoelectric phenomena, and the contribution of holes at the L, T points of the Brillouin zone. The positive values of differential thermoelectric power in bismuth films doped with tin can become the basis for searching for the possibility of creating a p-branch of thermoelectric energy converters in the low-temperature area. The obtained results of measurements can be used for creation of a low-dimensional bismuth-based structures with a controlled hole concentration.

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The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K

Cited by 7 publications

References 10 publications

Effect of a transverse electric field on the resistance of thin films of the Bi1 – xSbx (x = 0–0.12) system on mica

Effect of a transverse electric field on the resistance of thin films of the Bi1 – xSbx (x = 0–0.12) system on mica

Resistivity of thin bismuth films under in-plane tensile strain

Galvanomagnetic and Thermoelectric Properties of Bismuth Films Doped with Tin

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