The unique properties of bismuth and bismuth-antimony have attracted extensive attention in scope of strain engineering and straintronics in 2D materials in the past few decades. In this work we tested the technique of measurement of electric properties of bismuth films on glass and silicon substrates deformed by dome bending method. The obtained results show fine agreement with the investigation of films deformed by others techniques and can be used to model in-plane tensile deformation. Considering the use of two substrates of silicon and borosilicate glass, the method makes it possible to obtain continuously changed deformation of film in range up to 0.8 % of relative change of area at room temperature.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.