The unique properties of bismuth and bismuth-antimony have attracted extensive attention in scope of strain engineering and straintronics in 2D materials in the past few decades. In this work we tested the technique of measurement of electric properties of bismuth films on glass and silicon substrates deformed by dome bending method. The obtained results show fine agreement with the investigation of films deformed by others techniques and can be used to model in-plane tensile deformation. Considering the use of two substrates of silicon and borosilicate glass, the method makes it possible to obtain continuously changed deformation of film in range up to 0.8 % of relative change of area at room temperature.
The paper is devoted to the study of transverse electric field effect on transport properties of charge carriers in bismuth and bismuth-antimony thin films. Experimental results reveal the existence of electric field effect in thin films of composition up to 12 at.% Sb. The dependencies of resistance on magnitude of electric field are obtained in a wide range of film thicknesses. A qualitative interpretation of the observed effect is given based on the analysis of the mobility of electrons and holes in films depending on the sign of the electric field and the film thickness.
2D materials with van der Waals (vdW) gaps between covalently bonded blocks are in the focus of modern semiconductor science and technology. Of special interest is the possibility to control their properties through the vdW gap reconfiguration. Herein, using first‐principles simulations it is demonstrated that uniaxial compression of GaSe, counterintuitively, does not serve to close the gap but, instead, changes the dimensionality from 2D to quasi‐1D, with flat GaSe chains oriented along the applied pressure. The structural change is accompanied by drastic changes in electronic structure. The inability to close the vdW gap to the antibonding nature of Se–Se interactions is attributed.
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