The growth of diamond in microwave plasma under low pressure

Mitsuda, Yoshitaka; Kojima, Yoshiyuki; Yoshida, Toyonobu; Akashi, Kazuo

doi:10.1007/bf01132374

Cited by 184 publications

(30 citation statements)

References 11 publications

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“…Currently, significant but incomplete information regarding this issue is available in the literature. Mitsuda et al [11] observed that a vacant space between diamond particles existed at the interfaces due to the well-defined crystal habits of regular polyhedral. Kweon et al [12] reported that, on the backside of the separated film, the vacant space between particles was found and the central part of each particle caves in.…”

Section: Introductionmentioning

confidence: 99%

Interface study of diamond films grown on (100) silicon

Wang

et al. 2006

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

Interface study of diamond films grown on (100) silicon

Wang

et al. 2006

Thin Solid Films

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“…For instance, a nucleation density higher than 10 8 /cm 2 is required in diamond coating on metals in order to improve adhesion and to reduce carbon diffusion into the substrate. Different nucleation procedures have been proposed, the simplest of which is a diamond grit abrading process, where the flat substrate is pressed against a soft or hard plate that contains diamond powders from a natural or synthetic source [98]. By the end of this process, small diamond particles of sizes in the range of 2-10 nm are left on the surface and act as growth sites once the growth cycle is initiated.…”

Section: Effect Of Substrate Pre-treatment On Diamond Nucleationmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

249

156

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This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features. This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

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“…The simplest is abrasion of the substrate (Lee *Author for correspondence (amallik@cgcri.res.in) et al 1999) surface by mechanical polishing using diamond grit ranging in size from 10 nm-10 μm. The sample preparation techniques used for nucleation enhancement include scratching by diamond powder or any other abrasive (Mitsuda et al 1987;Chang et al 1988;Suzulu et al 1995), pre-deposition of interlayer (Feng et al 1993), seeding the substrate with diamond grit (Jansen et al 1990), electrical biasing of the substrates (Stoner et al 1992) and ion implantation of substrate surface (Hirabayashi et al 1988;Lin et al 1992). Among these, mechanical abrasion of substrate surface has proved most effective and cheapest.…”

Section: Introductionmentioning

confidence: 98%

Effect of substrate roughness on growth of diamond by hot filament CVD

et al. 2010

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Polycrystalline diamond coatings are grown on Si (100) substrate by hot filament CVD technique. We investigate here the effect of substrate roughening on the substrate temperature and methane concentration required to maintain high quality, high growth rate and faceted morphology of the diamond coatings. It has been shown that as we increase the substrate roughness from 0⋅05 μm to 0⋅91 μm (centre line average or CLA) there is enhancement in deposited film quality (Raman peak intensity ratio of sp 3 to non-sp 3 content increases from 1⋅65 to 7⋅13) and the substrate temperature can be brought down to 640°C without any additional substrate heating. The coatings grown at adverse conditions for sp 3 deposition has cauliflower morphology with nanocrystalline grains and coatings grown under favourable sp 3 condition gives clear faceted grains.

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The growth of diamond in microwave plasma under low pressure

Cited by 184 publications

References 11 publications

Interface study of diamond films grown on (100) silicon

Interface study of diamond films grown on (100) silicon

Diamond growth by chemical vapour deposition

Effect of substrate roughness on growth of diamond by hot filament CVD

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