Interface study of diamond films grown on (100) silicon

Wang, Sea-Fue; Wang, Yuh-Ruey; Pu, Jui-Chen; Sung, James C.

doi:10.1016/j.tsf.2005.07.268

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…In addition, the high value of grain density leads to high nucleation, which might lead to nanosized crystals but due to large deposition time µm sized crystals were the result. Also the present nucleation rates are relatively higher than those already noted by other researchers [13][14][15][16][17][18]. Thus it can be concluded that reactor pressure poses large effects on the diamond morphology and grain size.…”

Section: Effect On Morphologycontrasting

confidence: 55%

“…However, it was usually applied in the range from several tens to several hundred mbar for HFCVD diamond film growth. This yields diamond nucleation density of 10 7 -10 8 cm −2 [13,14]. Diamond films with high nucleation density of 10 10 -10 11 cm −2 have also been synthesized by Makris et al [15] at 29.5 mbar and by Pecoraro et al [16] at ≈ 15 mbar by applying a negative bias to the substrate.…”

Section: Introductionmentioning

confidence: 91%

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Effect of Reactor Pressure on Electrical and Structural Properties of Diamond Films Grown by Hot-Filament CVD

2017

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Polycrystalline diamond films with preferred (111) and (222) facets were fabricated inside hot filament chemical vapour deposition reactor on silicon wafers using a mixture of 1% methane in hydrogen at various reactor pressures ranging from 10 to 50 mbar. Regarding characterization of diamond films, internal texture, surface morphology, quality of diamond and electrical conductivity were investigated using X-ray diffraction, scanning electron microscopy, the Raman spectroscopy and four-point-probe van der Pauw techniques, respectively. Results of these studies demonstrate that polycrystalline diamond structure is grown in random orientation with (111) facet being dominant showing sharp grain boundaries. Moreover, growth rate was found to increase with pressure up to 20 mbar and then decreased for further rise in pressure. That is why grain density is high with relatively smaller grains at higher pressures caused by higher nucleation rates. In contrast, electrical resistivity decreased ≈ 3 orders of magnitude showing a minimum at 2.9 × 10 6 Ω cm as pressure was increased in the reactor. Reactor pressure during film growth resulted in poor surface morphology, absence of sp 3 bonds and low resistivity. Hence, decrease of resistivity makes diamond films desirable for many electrical applications in semiconducting/electronic devices.

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