2003
DOI: 10.1016/s0022-0728(03)00342-5
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The growth kinetics of thin anodic WO3 films investigated by electrochemical impedance spectroscopy

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Cited by 53 publications
(41 citation statements)
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“…j ss increases almost linearly with potential scan rate, according to expected for anodic growth through a ''high-field mechanism" and commonly found for oxide growth on other valve metals as tungsten [21]. At higher potentials (zone III) anodic growth continues, probably following the same oxide growth mechanism.…”
Section: General Electrochemical Behavioursupporting
confidence: 69%
“…j ss increases almost linearly with potential scan rate, according to expected for anodic growth through a ''high-field mechanism" and commonly found for oxide growth on other valve metals as tungsten [21]. At higher potentials (zone III) anodic growth continues, probably following the same oxide growth mechanism.…”
Section: General Electrochemical Behavioursupporting
confidence: 69%
“…Therefore, the difference in the intensity of the specific adsorption may contribute to the difference between the iep and pzc. It is also reported that [30] the phosphate ions, which are incorporated in the WO 3 (s) film during the dissolution experiments but not during the case zeta potential measurements, may change slightly the composition of the oxide film.…”
Section: Zeta Potential Of Wo 3 (S) Powdermentioning
confidence: 99%
“…Large values of ␣ Ϸ 0.5 ͑or even higher͒ were often used and estimated for these well-passive and well-protective film covered metals under steady-state or quasisteady-state conditions. For examples ␣ = 0.992 was estimated for passivated Zn, 22 0.42-0.58 for passivated W, 16,17 and 0.39 for passivated Fe; 20 ␣ = 0.5 was assumed and used for passivated Ti, 1 0.5 Ϯ 0.05 was quoted and used for passivated Fe, Cr, Ni, their alloys, 13,18 etc.…”
Section: C42mentioning
confidence: 99%