The Growth and Etching of Si through Windows in SiO[sub 2]

Abstract

A B S T R A C TA theory of the kinetics of vapor deposition and etching through small openings in an oxide layer on Si is developed and compared with experiments. A model that assumes equilibrium at the Si surface and purely diffusive transport through the gas phase is used to derive the concentrations and fluxes of the interesting gaseous species in the neighborhood of the window. The previously reported concave growth surfaces and convex etching surfaces are explained by the constriction of the flow near the edges of the windows. The measured etch rate is in quantitative agreement with theoretical estimates based on this model. Furthermore, the derived concentration profiles explain the appearance and relative size of the band of oxide free from Si overgrowth which surrounds each window in the growth experiments.) unless CC License in place (see abstract). ABSTRACTThis report describes a method of growing CuCl single crystals of the zinc blende phase directly from a melt which contains a flux such as SrCI2 or BaCI2. The presence of the flux at 2 mole % depresses the temperature of the melt below 407~

Selective Area Masked Growth (Nano to Micro)

“…The concepts of vapor-phase diffusion and surface diffusion in SAG were introduced by Oldham and Holmstrom in 1967 [69] and by Silvestri et al in 1972 [68]. Early SAG models assume that the nonuniform film thickness and the GRE in SAG is a result of changes in either the vapor-phase diffusion or the surface diffusion.…”

“…To understand more completely the growth dynamics in SAG, several growth models have been proposed by different groups [12,14,[67][68][69][70][71]. The dynamics involved in these epitaxial processes can be well described under many conditions by the mass transport limited model.…”

Buried-gate oxide thinning during epitaxial lateral overgrowth for dual-gated metal–oxide–semiconductor field-effect transistors

“…9 The HCl preclean is used to remove any damage in the silicon surfaces in the seed windows and to remove any elemental silicon that might be on the oxide surface. 9 The HCl preclean is used to remove any damage in the silicon surfaces in the seed windows and to remove any elemental silicon that might be on the oxide surface.…”

Growth Mechanism for Germanium Deposition near a SiO[sub 2]-Ge Boundary

“…Although anomalously low mobilities are commonly observed experimentally, anomalously high mobilities have also been observed in several semiconductors, including silicon where an accumulation layer was induced on a high-resistance n-type sample by an HF treatment (8) and GaAs which was grown under gallium-rich conditions (9). Mobilities which appear to be anomalously high have also been observed in other compound semiconductors which were grown under metal-rich conditions and which may have metallic inclusions or precipitates (10).…”

“…It is seen that, as a function of pad width l, A is linear in l for l ~ Xs. The slope at the origin is dA : l~t ~ [8] dl z=0…”