1990
DOI: 10.1149/1.2086988
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The Fabrication of Thin, Freestanding, Single‐Crystal, Semiconductor Membranes

Abstract: Freestanding, single-crystal, semiconductor membranes with thicknesses in the range of a few tens of nanometers to tens of microns are of increasing technological interest today. Their applications range from high speed electronic devices to electromechanical devices and pressure sensors. This review paper identifies two general classes of techniques for producing such thin membranes: dissolution of single-crystal wafers, and direct growth of single-crystal membranes. Numerous specific techniques in each gener… Show more

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Cited by 29 publications
(7 citation statements)
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“…If the n-type layer is too thin, holes which are injected from the p-type bulk may react at the n-type silicon/electrolyte interface before recombining. This also results in an n-type porous layer [26].…”
Section: ) the P/n Etch Stopmentioning
confidence: 97%
“…If the n-type layer is too thin, holes which are injected from the p-type bulk may react at the n-type silicon/electrolyte interface before recombining. This also results in an n-type porous layer [26].…”
Section: ) the P/n Etch Stopmentioning
confidence: 97%
“…Twenty years ago, process modeling was rarely employed, and processing experiments were used to adjust these existing bipolar IC processes into a manufacturable micromachining fabrication sequence. Most original work was required in the areas of silicon etching [22]- [26], wafer bonding [27], and micromachine packaging [28]- [32].…”
Section: Process Designmentioning
confidence: 99%
“…This sensor technology was quickly applied to barometric and turbo boost monitoring in the automobile. Improvements in silicon etching technology have continued for these devices [25], [26]. Wet silicon etching initially was accomplished using timed etching and a P etch-stop process.…”
Section: Commercial Automotive Micromachined Devicesmentioning
confidence: 99%
“…Instead, a buckling pattern is commonly observed. 1,14,15,23,24 In this letter, we show that flat Si nanomembranes can be created using a fabrication process that limits the buckling to a region near the edges of the window supporting the membrane. The membranes are placed under sufficient tension to overcome the buckling instability resulting from fabricationinduced residual strains.…”
mentioning
confidence: 93%