2013
DOI: 10.1063/1.4789553
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Edge-induced flattening in the fabrication of ultrathin freestanding crystalline silicon sheets

Abstract: Silicon nanomembranes are suspended single-crystal sheets of silicon, tens of nanometers thick, with areas in the thousands of square micrometers. Challenges in fabrication arise from buckling due to strains of over 10−3 in the silicon-on-insulator starting material. In equilibrium, the distortion is distributed across the entire membrane, minimizing the elastic energy with a large radius of curvature. We show that flat nanomembranes can be created using an elastically metastable configuration driven by the si… Show more

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Cited by 17 publications
(17 citation statements)
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“…Silicon membranes with thicknesses ranging from 6 to 315 nm were fabricated from ultrathin silicon-on-insulator (SOI) wafers [31]. Improved fabrication techniques yield flat unbuckled membranes, as shown in The distribution of TDS intensity for a 315 nm-thick membrane is shown in Fig.…”
mentioning
confidence: 99%
“…Silicon membranes with thicknesses ranging from 6 to 315 nm were fabricated from ultrathin silicon-on-insulator (SOI) wafers [31]. Improved fabrication techniques yield flat unbuckled membranes, as shown in The distribution of TDS intensity for a 315 nm-thick membrane is shown in Fig.…”
mentioning
confidence: 99%
“…2,3 A persistent challenge in advancing towards thin materials in perovskite complex oxides, however, is that lithographic processing of thin substrates can lead to low structural quality in terms of non-uniform thickness, roughness, buckling, or defect density. [4][5][6] Alternative approaches based on chemical exfoliation of large-unit-cell oxide compounds can create ultrathin substrates but have a severely limited range of compositions and crystallographic orientations. 7 In this Letter we report the creation and characterization of submicron-thickness SrTiO 3 (STO) sheets.…”
mentioning
confidence: 99%
“…Nanomembrane fabrication followed the using the edge-induced flattening method described in ref. [34]. The dip in the membrane profile as it leaves the ledge as shown schematically in Fig.…”
Section: Methodsmentioning
confidence: 99%