The fabrication and characteristics of indium-oxide covered porous InP

Abstract

Uniform and vertical indium-oxide nanotube (IONT) arrays embedded well in n-type InP single crystal have been successfully prepared in situ by porous InP-template-assisted chemical vapor deposition (CVD). This IONT/InP nanostructure reveals high sensitivity to humidity at room temperature, which is ascribed to the ultrahigh surface-to-volume ratio of this nanostructure and the large number of oxygen defected states in IONTs. Such a nanostructure of IONT arrays embedded in a III-V semiconductor substrate could be expected to have potential applications, such as superior gas sensors. This work provides a novel approach for fabricating low-melting metal oxide semiconductor nanotubes.

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

“…Therefore, ethanol solution is chosen to fabricate Co/InP nanocomposites, the composition of which is analyzed by EDS as shown in Figure 3a, where only In, P, and Co exist (without the presence of oxygen), indicating that the pure Co nanoparticles have been successfully embedded in the porous InP semiconductor matrix and the ethanol solution effectively protects Co from oxidization. To further investigate the structure and composition of such Co/InP nanocomposites, the XRD pattern has been measured and shown in Figure 3b, where two strong diffraction peaks at 2θ = 30.52° and 63.41° are, respectively, identified as (200) and (400) of the porous InP template consistent with the previous results [34,40]. The other four peaks at 2θ = 41.59°, 44.26°, 47.39°, and 75.89° correspond to hexagonal Co (100), (002), (101), and (110), respectively.…”

“…In addition, owing to its direct band gap and enhanced nonlinear optical response, increasing interest has been focused on porous InP because of its potential applications in nanoscaled Schottky diodes, waveguides, solar cells, and for fabricating nanocomposite materials [30-34]. However, to our knowledge, there are no reports on the composite between porous InP matrix and magnetic materials.…”

Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy

“…An attractive alternative is to enhance the development of other porous III-V semiconductor compounds, such as GaP, InP , and GaAs as well as the wide bandgap and corrosion resistant materials like GaN and SiC. [8][9][10][11][12][13] Wide bandgap III-nitride semiconductors are generally grown on sapphire or SiC substrates. The GaN, sapphire, and 6H À SiC semiconductors have in-plane lattice constants of 3.189 Å , 4.758 Å , and 3.08 Å , respectively, and have a thermal expansion coefficients of 5.59 Â 10 À6 /K, 7.5 Â 10…”