The Evolutionary Process for 3D Stacked CMOS Image Sensor and the Advanced Technologies

Mizuta, Kyohei; Tsugawa, Hidenobu; Nakamura, Ryoichi; Kagawa, Y.; Takahashi, Tomohiro; Sakakibara, Masaki; Tatani, Keiji

doi:10.1380/vss.62.660

Cited by 3 publications

(3 citation statements)

References 4 publications

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“…Complementary metal-oxide-semiconductor (CMOS) image sensors have been widely used not only for imaging using digital still cameras, smartphones, and others, but also for sensing in, for example, automobiles and security systems with the progress of the internet-of-things (IOT) society. Among them, three-dimensionally stacked back-side-illuminated CMOS image sensors (3D-CISs) products have been actively developed to achieve the desired characteristics, such as high resolution, high sensitivity, and high-speed imaging data processing [ 1 ]. However, 3D-CISs have serious technological issues that degrade device characteristics, such as dark currents and white spot defects associated with the device fabrication process [ 2 ].…”

Section: Introductionmentioning

confidence: 99%

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Kadono

Hirose

Onaka‐Masada

et al. 2022

Sensors

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Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH2P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer to improve the gettering capability for metallic impurities. A complementary metal-oxide-semiconductor (CMOS) image sensor fabricated with this novel epitaxial silicon wafer has a markedly reduced number of white spot defects, as determined by dark current spectroscopy (DCS). In addition, the amount of nickel impurities gettered in the CH2P-molecular-ion-implanted region of this CMOS image sensor is higher than that gettered in the C3H5-molecular-ion-implanted region; and this implanted region is formed by high-density black pointed defects and deactivated phosphorus after epitaxial growth. From the obtained results, the CH2P-molecular-ion-implanted region has two types of complexes acting as gettering sinks. One includes carbon-related complexes such as aggregated C–I, and the other includes phosphorus-related complexes such as P4–V. These complexes have a high binding energy to metallic impurities. Therefore, CH2P-molecular-ion-implanted epitaxial silicon wafers have a high gettering capability for metallic impurities and contribute to improving the device performance of CMOS image sensors. (This manuscript is an extension from a paper presented at the 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2022)).

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Section: Introductionmentioning

confidence: 99%

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Kadono

Hirose

Onaka‐Masada

et al. 2022

Sensors

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“…Since the demand for high-performance CISs continues to increase, markets of advanced CISs, such as back-side-illuminated CIS (BSI-CIS) and three-dimensional (3D) stacked CIS, are expanding. [4][5][6] BSI-CIS and 3D stacked CIS have higher sensitivity, dynamic range, and imaging speed than conventional front-sideilluminated CIS (FSI-CIS) because of their device structure. 5,6 To realize high-performance advanced CIS, the reduction in photodiode dark current is essential.…”

mentioning

confidence: 99%

“…[4][5][6] BSI-CIS and 3D stacked CIS have higher sensitivity, dynamic range, and imaging speed than conventional front-sideilluminated CIS (FSI-CIS) because of their device structure. 5,6 To realize high-performance advanced CIS, the reduction in photodiode dark current is essential. One of the predominant origins of dark current is silicon dioxide (SiO 2 )/silicon (Si) interface state defects.…”

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confidence: 99%

Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO₂/Si Structure Fabricated Using H⁺-Implanted Si Substrate

Suzuki

Takahashi

Okuyama

et al. 2020

J. Electrochem. Soc.

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Using proton (H+)-implanted silicon (Si) substrates, we clarified the effect of dangling bond termination by hydrogen on the interfacial strain in the silicon dioxide (SiO2)/Si system. The variations of the SiO2/Si interface structure caused by H+ implantation into a SiO2/Si sample and by hydrogen out-diffusion heat treatment were analyzed by high-resolution synchrotron radiation photoemission spectroscopy. We found that H+ implantation into the SiO2/Si sample [intentional generation of the interfacial dangling bonds] can increase the intensity of the strained-Si peaks in the Si 2p photoemission spectrum. In addition, our study revealed that the strained Si atom amount and dangling bond density are reduced by hydrogen out-diffusion heat treatment. These findings suggest that the increase/decrease in the dangling bond density by H atoms results in the increase/decrease in local strain field around a dangling bond, thereby changing the length of the Si–Si bonds beneath the SiO2/Si interface. Out-diffused hydrogen seems to play roles to not only reduce the dangling bond density but also relax the local strain at the SiO2/Si interface. The hydrogen termination effect is expected to have an advantage in structural stability in the SiO2/Si system as compared with the pure thermal termination effect.

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Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography

Shigematsu

Okuyama

Hirose

et al. 2020

Nuclear Instruments and Methods in Physics Research Section B:

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The Evolutionary Process for 3D Stacked CMOS Image Sensor and the Advanced Technologies

Abstract: In recent years, imaging quality of a CMOS image sensor (CIS) is remarkably improving. This paper reviews the technology development of CIS for mobile devices.

Cited by 3 publications

References 4 publications

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO₂/Si Structure Fabricated Using H⁺-Implanted Si Substrate

Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography

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The Evolutionary Process for 3D Stacked CMOS Image Sensor and the Advanced Technologies

Abstract: In recent years, imaging quality of a CMOS image sensor (CIS) is remarkably improving. This paper reviews the technology development of CIS for mobile devices.

Cited by 3 publications

References 4 publications

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO2/Si Structure Fabricated Using H+-Implanted Si Substrate

Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography

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Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO₂/Si Structure Fabricated Using H⁺-Implanted Si Substrate