Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography

Shigematsu, Satoshi; Okuyama, Ryosuke; Hirose, Ryo; Kadono, Takeshi; Onaka‐Masada, Ayumi; Suzuki, Akihiro; Kobayashi, Kōji; Okuda, Hiroyuki; Koga, Yoshio; Kurita, Kazunari

doi:10.1016/j.nimb.2020.05.017

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…A recent L-APT study on Cu gettering in the hydrocarbon-molecular-ion-implanted region revealed that the Cu gettering capability through C– I agglomerates decreased with increasing number of O atoms in the agglomerates [ 45 ]. Our L-APT data in Figure 11 show that the O concentration included in C– I agglomerates was much lower in the C 3 H 6 -ion-implanted double epitaxial Si wafer than in the single epitaxial Si wafer, even after the device fabrication process.…”

Section: Resultsmentioning

confidence: 99%

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Onaka‐Masada

Kadono

Okuyama

et al. 2020

Sensors

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The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown silicon substrate. This considerable reduction in white spot defects on the C3H6-ion-implanted double epitaxial silicon wafer may be due to the high gettering capability for metallic contamination during the device fabrication process and the suppression effects of oxygen diffusion into the device active layer. In addition, the defects with low internal oxygen concentration were observed in the C3H6-ion-implanted region of the double epitaxial silicon wafer after the device fabrication process. We found that the formation of defects with low internal oxygen concentration is a phenomenon specific to the C3H6-ion-implanted double epitaxial wafer. This finding suggests that the oxygen concentration in the defects being low is a factor in the high gettering capability for metallic impurities, and those defects are considered to directly contribute to the reduction in white spot defects in CMOS image sensor pixels.

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Section: Resultsmentioning

confidence: 99%

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Onaka‐Masada

Kadono

Okuyama

et al. 2020

Sensors

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“…The C–I complex has been shown by density functional theory (DFT) calculation to have high binding energies to metallic impurities and acts as a strong gettering sink [ 40 , 41 , 42 ]. Moreover, Masada and coworkers also concluded that the gettering capability of agglomerated C–I complexes for metallic impurities depends on the oxygen concentration in agglomerated C–I complexes, and that agglomerated C–I complexes with low oxygen concentrations have a high gettering capability, as shown by electron interaction with metallic impurities and nanostructure analysis using L-ATP [ 43 , 44 , 45 ]. SIMS analysis results show a similar tendency of the carbon and oxygen concentrations localized in the CH 2 P-molecular-ion-implanted region after epitaxial growth.…”

Section: Discussionmentioning

confidence: 99%

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Kadono

Hirose

Onaka‐Masada

et al. 2022

Sensors

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Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH2P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer to improve the gettering capability for metallic impurities. A complementary metal-oxide-semiconductor (CMOS) image sensor fabricated with this novel epitaxial silicon wafer has a markedly reduced number of white spot defects, as determined by dark current spectroscopy (DCS). In addition, the amount of nickel impurities gettered in the CH2P-molecular-ion-implanted region of this CMOS image sensor is higher than that gettered in the C3H5-molecular-ion-implanted region; and this implanted region is formed by high-density black pointed defects and deactivated phosphorus after epitaxial growth. From the obtained results, the CH2P-molecular-ion-implanted region has two types of complexes acting as gettering sinks. One includes carbon-related complexes such as aggregated C–I, and the other includes phosphorus-related complexes such as P4–V. These complexes have a high binding energy to metallic impurities. Therefore, CH2P-molecular-ion-implanted epitaxial silicon wafers have a high gettering capability for metallic impurities and contribute to improving the device performance of CMOS image sensors. (This manuscript is an extension from a paper presented at the 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2022)).

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Three-dimensional imaging of carbon clusters in thermally stable nickel silicides by carbon pre-implantation

Park

Seol

Yoon

et al. 2021

Applied Surface Science

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Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography

Cited by 5 publications

References 35 publications

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation

Three-dimensional imaging of carbon clusters in thermally stable nickel silicides by carbon pre-implantation

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